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Statements

Subject Item
n2:RIV%2F49777513%3A23640%2F10%3A43898566%21RIV12-MSM-23640___
rdf:type
skos:Concept n12:Vysledek
dcterms:description
The a-Si:H ?lms with different thickness and microstructure have been deposited with rf-PECVD using a plasma of silane diluted with hydrogen. The structure and optical analysis were carried out by X-ray diffraction, UV/VIS and Raman spectroscopy. Spectral refractive indices, optical energy band gaps, extinction coef?cients, phases ratio and grain size were determined as a function of the hydrogen dilution (R = H2/SiH4). Hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to micro-crystalline hydrogenated silicon (mc-Si:H). XRD analysis indicated that ?lms with R = 0 and R = 20 were amorphous and homogeneous, while ?lms with R = 40 and higher were micro-crystalline consisting medium range ordered silicon hydride (Si4H) and mc-Si phases with different size of crystallites, which was con?rmed also by Raman spectroscopy. The a-Si:H ?lms with different thickness and microstructure have been deposited with rf-PECVD using a plasma of silane diluted with hydrogen. The structure and optical analysis were carried out by X-ray diffraction, UV/VIS and Raman spectroscopy. Spectral refractive indices, optical energy band gaps, extinction coef?cients, phases ratio and grain size were determined as a function of the hydrogen dilution (R = H2/SiH4). Hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to micro-crystalline hydrogenated silicon (mc-Si:H). XRD analysis indicated that ?lms with R = 0 and R = 20 were amorphous and homogeneous, while ?lms with R = 40 and higher were micro-crystalline consisting medium range ordered silicon hydride (Si4H) and mc-Si phases with different size of crystallites, which was con?rmed also by Raman spectroscopy.
dcterms:title
Optical and structural characterization of inhomogeneities in a-Si:H to mc-Si transition Optical and structural characterization of inhomogeneities in a-Si:H to mc-Si transition
skos:prefLabel
Optical and structural characterization of inhomogeneities in a-Si:H to mc-Si transition Optical and structural characterization of inhomogeneities in a-Si:H to mc-Si transition
skos:notation
RIV/49777513:23640/10:43898566!RIV12-MSM-23640___
n3:aktivita
n14:P
n3:aktivity
P(1M06031)
n3:cisloPeriodika
4
n3:dodaniDat
n13:2012
n3:domaciTvurceVysledku
n11:8498989 n11:6890075 n11:2891484 n11:1889788
n3:druhVysledku
n15:J
n3:duvernostUdaju
n10:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
277145
n3:idVysledku
RIV/49777513:23640/10:43898566
n3:jazykVysledku
n17:eng
n3:klicovaSlova
Raman spectroscopy; X-ray diffraction; PE-CVD; Phase transition; a-Si:H ?lm
n3:klicoveSlovo
n5:Phase%20transition n5:a-Si%3AH%20%3Flm n5:Raman%20spectroscopy n5:X-ray%20diffraction n5:PE-CVD
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[CC0E415F5EBD]
n3:nazevZdroje
Vacuum
n3:obor
n7:BM
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
5
n3:projekt
n19:1M06031
n3:rokUplatneniVysledku
n13:2010
n3:svazekPeriodika
85
n3:tvurceVysledku
Müllerová, Jarmila Šutta, Pavol Prušáková, Lucie Vavruňková, Veronika Netrvalová, Marie
s:issn
0042-207X
s:numberOfPages
4
n9:doi
10.1016/j.vacuum.2010.01.021
n16:organizacniJednotka
23640