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Statements

Subject Item
n2:RIV%2F49777513%3A23640%2F10%3A00503615%21RIV11-MSM-23640___
rdf:type
n3:Vysledek skos:Concept
dcterms:description
The paper deals with the hydrogenated amorphous silicon (a-Si:H) films about 300 nm in thickness prepared by using rf-PECVD with hydrogen dilution R = 10 of the silane source gas in the amorphous growth regime onto clean Corning Eagle 2000 glass substrates at different deposition temperatures ranging from 50 to 200 °C. Structural and optical properties of the films were obtained from X-ray diffraction and UV-Vis spectrophotometry. The full width at half maximum of the first scattering peak decreases with increasing of the deposition temperature up to 150 °C and then remains constant. Optical band-gaps are from 1.65 to 1.76 eV, which slightly decrease with increasing deposition temperature, whereas the refractive index increases with increasing deposition temperature. This indicates that the density of the films at higher temperature has increased. The paper deals with the hydrogenated amorphous silicon (a-Si:H) films about 300 nm in thickness prepared by using rf-PECVD with hydrogen dilution R = 10 of the silane source gas in the amorphous growth regime onto clean Corning Eagle 2000 glass substrates at different deposition temperatures ranging from 50 to 200 °C. Structural and optical properties of the films were obtained from X-ray diffraction and UV-Vis spectrophotometry. The full width at half maximum of the first scattering peak decreases with increasing of the deposition temperature up to 150 °C and then remains constant. Optical band-gaps are from 1.65 to 1.76 eV, which slightly decrease with increasing deposition temperature, whereas the refractive index increases with increasing deposition temperature. This indicates that the density of the films at higher temperature has increased.
dcterms:title
Structure and optical properties of the hydrogen diluted a-Si:H thin films prepared by PECVD with different deposition temperatures Structure and optical properties of the hydrogen diluted a-Si:H thin films prepared by PECVD with different deposition temperatures
skos:prefLabel
Structure and optical properties of the hydrogen diluted a-Si:H thin films prepared by PECVD with different deposition temperatures Structure and optical properties of the hydrogen diluted a-Si:H thin films prepared by PECVD with different deposition temperatures
skos:notation
RIV/49777513:23640/10:00503615!RIV11-MSM-23640___
n7:aktivita
n11:P
n7:aktivity
P(1M06031)
n7:dodaniDat
n10:2011
n7:domaciTvurceVysledku
n15:1889788 n15:8498989
n7:druhVysledku
n18:D
n7:duvernostUdaju
n20:S
n7:entitaPredkladatele
n17:predkladatel
n7:idSjednocenehoVysledku
290475
n7:idVysledku
RIV/49777513:23640/10:00503615
n7:jazykVysledku
n14:eng
n7:klicovaSlova
a-Si:H; physical properties; deposition temperature; hydrogen diluted
n7:klicoveSlovo
n8:deposition%20temperature n8:hydrogen%20diluted n8:a-Si%3AH n8:physical%20properties
n7:kontrolniKodProRIV
[FC27B38B3A96]
n7:mistoKonaniAkce
Smolenice Castle, Slovakia
n7:mistoVydani
New York
n7:nazevZdroje
ASDAM 2010
n7:obor
n21:BM
n7:pocetDomacichTvurcuVysledku
2
n7:pocetTvurcuVysledku
5
n7:projekt
n12:1M06031
n7:rokUplatneniVysledku
n10:2010
n7:tvurceVysledku
Fischer, Marinus Zeman, Miro Müllerová, Jarmila Netrvalová, Marie Šutta, Pavol
n7:typAkce
n9:WRD
n7:zahajeniAkce
2010-01-01+01:00
s:numberOfPages
4
n19:hasPublisher
IEEE Nuclear and Plasma Sciences Society
n5:isbn
978-1-4244-8572-7
n6:organizacniJednotka
23640