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Statements

Subject Item
n2:RIV%2F49777513%3A23640%2F10%3A00503426%21RIV11-MSM-23640___
rdf:type
n14:Vysledek skos:Concept
dcterms:description
The contribution deals with ZnO thin layers doped by nitrogen which were prepared by pulsed laser deposition in N2O ambient atmosphere. Our approach is based on ablation of undoped ZnO target in active atmosphere containing N2O gas without any supporting excitation equipment in parallel. Ablation of ZnO target was performed at different pressures (from 1 to 32 Pa) of N2O ambient atmosphere by pulsed Nd:YAG laser (at 355 nm). Layers of ZnO were grown on different substrates (Si, sapphire, fused silica) and their properties were investigated by various analytical methods: scanning electron microscopy (SEM), secondary ion mass spectroscopy (SIMS), X-ray diffraction (XRD), and optical transmission spectroscopy. The results confirmed incorporation of nitrogen into ZnO layers and its concentration was pressure dependent. According to SIMS analysis, there is a certain pressure level (above 10 Pa) when the presence of N becomes negligible. Transmittance spectra showed increasing of the optical band gap (Eg) The contribution deals with ZnO thin layers doped by nitrogen which were prepared by pulsed laser deposition in N2O ambient atmosphere. Our approach is based on ablation of undoped ZnO target in active atmosphere containing N2O gas without any supporting excitation equipment in parallel. Ablation of ZnO target was performed at different pressures (from 1 to 32 Pa) of N2O ambient atmosphere by pulsed Nd:YAG laser (at 355 nm). Layers of ZnO were grown on different substrates (Si, sapphire, fused silica) and their properties were investigated by various analytical methods: scanning electron microscopy (SEM), secondary ion mass spectroscopy (SIMS), X-ray diffraction (XRD), and optical transmission spectroscopy. The results confirmed incorporation of nitrogen into ZnO layers and its concentration was pressure dependent. According to SIMS analysis, there is a certain pressure level (above 10 Pa) when the presence of N becomes negligible. Transmittance spectra showed increasing of the optical band gap (Eg)
dcterms:title
Pulsed laser deposition of ZnO in N2O atmosphere Pulsed laser deposition of ZnO in N2O atmosphere
skos:prefLabel
Pulsed laser deposition of ZnO in N2O atmosphere Pulsed laser deposition of ZnO in N2O atmosphere
skos:notation
RIV/49777513:23640/10:00503426!RIV11-MSM-23640___
n3:aktivita
n6:P
n3:aktivity
P(1M06031)
n3:cisloPeriodika
4
n3:dodaniDat
n5:2011
n3:domaciTvurceVysledku
n4:8498989 n4:1889788
n3:druhVysledku
n16:J
n3:duvernostUdaju
n12:S
n3:entitaPredkladatele
n10:predkladatel
n3:idSjednocenehoVysledku
283485
n3:idVysledku
RIV/49777513:23640/10:00503426
n3:jazykVysledku
n17:eng
n3:klicovaSlova
ZnO; N2O atmosphere; pulsed laser deposition
n3:klicoveSlovo
n11:ZnO n11:pulsed%20laser%20deposition n11:N2O%20atmosphere
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[49EE147624CC]
n3:nazevZdroje
Applied Physics A - Materials Science & Processing
n3:obor
n18:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
5
n3:projekt
n7:1M06031
n3:rokUplatneniVysledku
n5:2010
n3:svazekPeriodika
101
n3:tvurceVysledku
Bruncko, Jaroslav Netrvalová, Marie Šutta, Pavol Vincze, Andrej Uherek, František
s:issn
0947-8396
s:numberOfPages
5
n8:organizacniJednotka
23640