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Statements

Subject Item
n2:RIV%2F49777513%3A23640%2F10%3A00503402%21RIV11-MSM-23640___
rdf:type
n7:Vysledek skos:Concept
dcterms:description
Taking into account the fact that the distribution of defect states at the interface does not have strictly symmetrical shape, we present a simulation study of a-Si:H(n)/c-Si(p) and a-Si:H(p)/c-Si(n) structures with regard to the defect states at the interface, band offsets and doping concentration of the emitter. The presented results suggest for a-Si:H(n)/c-Si(p) solar cells a strong influence of the introduced broken symmetry between acceptor and donor defect states on the open-circuit voltage, whereas the a-Si:H(p)/c-Si(n) structure benefits from inherent favorable band alignment and remains unaffected. Taking into account the fact that the distribution of defect states at the interface does not have strictly symmetrical shape, we present a simulation study of a-Si:H(n)/c-Si(p) and a-Si:H(p)/c-Si(n) structures with regard to the defect states at the interface, band offsets and doping concentration of the emitter. The presented results suggest for a-Si:H(n)/c-Si(p) solar cells a strong influence of the introduced broken symmetry between acceptor and donor defect states on the open-circuit voltage, whereas the a-Si:H(p)/c-Si(n) structure benefits from inherent favorable band alignment and remains unaffected.
dcterms:title
Influence of the broken symmetry of defect state distribution at the a-Si:H/c-Si interface on the performance of hetero-junction solar cells Influence of the broken symmetry of defect state distribution at the a-Si:H/c-Si interface on the performance of hetero-junction solar cells
skos:prefLabel
Influence of the broken symmetry of defect state distribution at the a-Si:H/c-Si interface on the performance of hetero-junction solar cells Influence of the broken symmetry of defect state distribution at the a-Si:H/c-Si interface on the performance of hetero-junction solar cells
skos:notation
RIV/49777513:23640/10:00503402!RIV11-MSM-23640___
n3:aktivita
n10:P
n3:aktivity
P(1M06031)
n3:cisloPeriodika
256
n3:dodaniDat
n11:2011
n3:domaciTvurceVysledku
n15:8498989
n3:druhVysledku
n5:J
n3:duvernostUdaju
n18:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
263817
n3:idVysledku
RIV/49777513:23640/10:00503402
n3:jazykVysledku
n13:eng
n3:klicovaSlova
Broken symmetry; defect states at the interface a-Si:H/c-Si hetero-junction; solar cell
n3:klicoveSlovo
n8:Broken%20symmetry n8:defect%20states%20at%20the%20interface%20a-Si%3AH%2Fc-Si%20hetero-junction n8:solar%20cell
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[A4F1663406CA]
n3:nazevZdroje
Applied Surface Science
n3:obor
n16:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
5
n3:projekt
n12:1M06031
n3:rokUplatneniVysledku
n11:2010
n3:svazekPeriodika
18
n3:tvurceVysledku
Racko, Juraj Gašpierik, Pavol Harmatha, Ladislav Mikolášek, Miroslav Šutta, Pavol
s:issn
0169-4332
s:numberOfPages
5
n4:organizacniJednotka
23640