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Statements

Subject Item
n2:RIV%2F49777513%3A23640%2F10%3A00503362%21RIV11-MSM-23640___
rdf:type
skos:Concept n18:Vysledek
dcterms:description
A systematic and detailed analysis of the influence of hydrogen (H2) dilution of silane (SiH4) on the structural properties of thin hydrogenated silicon (Si:H) films was carried out. The Si:H films were prepared by plasma enhanced chemical vapour deposition method at different H2 to SiH4 flow ratios (R) ranging from R=0 to 40. A detailed structural analysis was carried out by X-ray diffraction (XRD). In order to suppress the XRD intensity from the substrate, Si:H films were deposited onto a [100]-oriented single-crystalline silicon substrate and XRD was carried out with a thin-film attachment. The XRD analysis demonstrated that the first diffraction peak in the Si:H films corresponded to the signal from silicon hydride (Si4H) ordered domains having tetragonal lattice structure. The full width of half maximum (FWHM) of the peak was decreasing with increasing H2 dilution, and remained nearly constant for R>20. The FWHMvalues confirmed that the Si:H films grown at R>20 are more ordered than films d A systematic and detailed analysis of the influence of hydrogen (H2) dilution of silane (SiH4) on the structural properties of thin hydrogenated silicon (Si:H) films was carried out. The Si:H films were prepared by plasma enhanced chemical vapour deposition method at different H2 to SiH4 flow ratios (R) ranging from R=0 to 40. A detailed structural analysis was carried out by X-ray diffraction (XRD). In order to suppress the XRD intensity from the substrate, Si:H films were deposited onto a [100]-oriented single-crystalline silicon substrate and XRD was carried out with a thin-film attachment. The XRD analysis demonstrated that the first diffraction peak in the Si:H films corresponded to the signal from silicon hydride (Si4H) ordered domains having tetragonal lattice structure. The full width of half maximum (FWHM) of the peak was decreasing with increasing H2 dilution, and remained nearly constant for R>20. The FWHMvalues confirmed that the Si:H films grown at R>20 are more ordered than films d
dcterms:title
Medium-range order in a-Si:H films prepared from hydrogen diluted silane Medium-range order in a-Si:H films prepared from hydrogen diluted silane
skos:prefLabel
Medium-range order in a-Si:H films prepared from hydrogen diluted silane Medium-range order in a-Si:H films prepared from hydrogen diluted silane
skos:notation
RIV/49777513:23640/10:00503362!RIV11-MSM-23640___
n4:aktivita
n14:P
n4:aktivity
P(1M06031)
n4:cisloPeriodika
3
n4:dodaniDat
n7:2011
n4:domaciTvurceVysledku
n13:8498989 n13:2891484
n4:druhVysledku
n11:J
n4:duvernostUdaju
n17:S
n4:entitaPredkladatele
n6:predkladatel
n4:idSjednocenehoVysledku
270284
n4:idVysledku
RIV/49777513:23640/10:00503362
n4:jazykVysledku
n10:eng
n4:klicovaSlova
a-Si:H thin films; XRD analysis; Raman spectroscopy; medium-range order
n4:klicoveSlovo
n5:XRD%20analysis n5:medium-range%20order n5:a-Si%3AH%20thin%20films n5:Raman%20spectroscopy
n4:kodStatuVydavatele
DE - Spolková republika Německo
n4:kontrolniKodProRIV
[B10A185F4AB1]
n4:nazevZdroje
Physica Status Solidi A - Applications and Materials Science
n4:obor
n12:BM
n4:pocetDomacichTvurcuVysledku
2
n4:pocetTvurcuVysledku
4
n4:projekt
n16:1M06031
n4:rokUplatneniVysledku
n7:2010
n4:svazekPeriodika
207
n4:tvurceVysledku
Vavruňková, Veronika Šutta, Pavol van Elzakker, Gijs Zeman, Miro
s:issn
1862-6300
s:numberOfPages
4
n15:organizacniJednotka
23640