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Statements

Subject Item
n2:RIV%2F49777513%3A23640%2F10%3A00503315%21RIV11-MSM-23640___
rdf:type
skos:Concept n19:Vysledek
dcterms:description
Technology of amorphous hydrogenated silicon (a-Si:H) thin films is a subject of interest of many researchers. This paper deals with the re-crystallization processes in a-Si:H thin films prepared by plasma enhanced chemical vapour deposition (PECVD) using a SAMCO PD-220N unit. Evaluation of crystallization process was monitored in a high temperature chamber AP1200 by using ?in-situ? X-ray diffraction (XRD). The experiments have given information about phase transformation from the amorphous to polycrystalline phase and were carried out at temperatures in the range of 580 °C to 620 °C. The average crystalline size of crystallized films was found from 40 to 50 nm. Structural properties of the initial amorphous and re-crystallized films were also investigated by Raman spectroscopy. Optical properties (refractive indices, extinction coefficients) of a-Si:H and poly-Si films were analyzed by UV Vis spectrophotometry. The absorption properties of the films were carried out from the UV Vis experimental data. Technology of amorphous hydrogenated silicon (a-Si:H) thin films is a subject of interest of many researchers. This paper deals with the re-crystallization processes in a-Si:H thin films prepared by plasma enhanced chemical vapour deposition (PECVD) using a SAMCO PD-220N unit. Evaluation of crystallization process was monitored in a high temperature chamber AP1200 by using ?in-situ? X-ray diffraction (XRD). The experiments have given information about phase transformation from the amorphous to polycrystalline phase and were carried out at temperatures in the range of 580 °C to 620 °C. The average crystalline size of crystallized films was found from 40 to 50 nm. Structural properties of the initial amorphous and re-crystallized films were also investigated by Raman spectroscopy. Optical properties (refractive indices, extinction coefficients) of a-Si:H and poly-Si films were analyzed by UV Vis spectrophotometry. The absorption properties of the films were carried out from the UV Vis experimental data.
dcterms:title
Study of Re-crystallization Processes in Amorphous Silicon Films Study of Re-crystallization Processes in Amorphous Silicon Films
skos:prefLabel
Study of Re-crystallization Processes in Amorphous Silicon Films Study of Re-crystallization Processes in Amorphous Silicon Films
skos:notation
RIV/49777513:23640/10:00503315!RIV11-MSM-23640___
n3:aktivita
n15:S n15:P
n3:aktivity
P(1M06031), S
n3:dodaniDat
n16:2011
n3:domaciTvurceVysledku
n5:2891484 n5:6890075 n5:8498989 n5:1889788
n3:druhVysledku
n21:D
n3:duvernostUdaju
n10:S
n3:entitaPredkladatele
n9:predkladatel
n3:idSjednocenehoVysledku
290825
n3:idVysledku
RIV/49777513:23640/10:00503315
n3:jazykVysledku
n17:eng
n3:klicovaSlova
re-crystallization; amorphous silicon (a-Si)
n3:klicoveSlovo
n12:amorphous%20silicon%20%28a-Si%29 n12:re-crystallization
n3:kontrolniKodProRIV
[62F65EC0F200]
n3:mistoKonaniAkce
Niš, Serbia
n3:mistoVydani
Niš
n3:nazevZdroje
Proceedings 27th International Conference on Microelectronics
n3:obor
n11:BM
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
5
n3:projekt
n18:1M06031
n3:rokUplatneniVysledku
n16:2010
n3:tvurceVysledku
Netrvalová, Marie Vavruňková, Veronika Šutta, Pavol Prušáková, Lucie Müllerová, Jarmila
n3:typAkce
n20:WRD
n3:zahajeniAkce
2010-01-01+01:00
s:numberOfPages
4
n7:hasPublisher
Electron Devices Society of the Institute of Electrical and Electronics Engineers
n14:isbn
978-1-4244-7198-0
n8:organizacniJednotka
23640