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Statements

Subject Item
n2:RIV%2F49777513%3A23640%2F09%3A00501778%21RIV10-MSM-23640___
rdf:type
skos:Concept n11:Vysledek
dcterms:description
This paper deals with the structural and optical properties of the polycrystalline silicon films initially deposited in amorphous state by electron beam evaporation technology on a Corning glass and consequently thermally re-crystallized from solid phase. The re-crystallization process was ?in situ? monitored by X-ray diffraction using an evacuated high temperature chamber at temperatures from 590°C to 650°C. Optical properties of the films carried out from the optical spectrophotometry recorded in a visible range of electromagnetic spectra were then confronted with the micro-structure parameters of the films. Relationships between the crystalline/amorphous state, crystallite size and optical band-gaps, spectral refractive indexes and spectral extinction coefficients are clearly demonstrated. This paper deals with the structural and optical properties of the polycrystalline silicon films initially deposited in amorphous state by electron beam evaporation technology on a Corning glass and consequently thermally re-crystallized from solid phase. The re-crystallization process was ?in situ? monitored by X-ray diffraction using an evacuated high temperature chamber at temperatures from 590°C to 650°C. Optical properties of the films carried out from the optical spectrophotometry recorded in a visible range of electromagnetic spectra were then confronted with the micro-structure parameters of the films. Relationships between the crystalline/amorphous state, crystallite size and optical band-gaps, spectral refractive indexes and spectral extinction coefficients are clearly demonstrated.
dcterms:title
Optical properties of re-crystallized polycrystalline silicon thin films from a-Si films deposited by electron beam evaporation Optical properties of re-crystallized polycrystalline silicon thin films from a-Si films deposited by electron beam evaporation
skos:prefLabel
Optical properties of re-crystallized polycrystalline silicon thin films from a-Si films deposited by electron beam evaporation Optical properties of re-crystallized polycrystalline silicon thin films from a-Si films deposited by electron beam evaporation
skos:notation
RIV/49777513:23640/09:00501778!RIV10-MSM-23640___
n3:aktivita
n16:P
n3:aktivity
P(1M06031)
n3:cisloPeriodika
5
n3:dodaniDat
n14:2010
n3:domaciTvurceVysledku
n8:2891484 n8:8498989
n3:druhVysledku
n12:J
n3:duvernostUdaju
n18:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
331827
n3:idVysledku
RIV/49777513:23640/09:00501778
n3:jazykVysledku
n10:eng
n3:klicovaSlova
optical properties; a-Si thin films; annealing
n3:klicoveSlovo
n5:a-Si%20thin%20films n5:optical%20properties n5:annealing
n3:kodStatuVydavatele
SK - Slovenská republika
n3:kontrolniKodProRIV
[4C12677F3F6E]
n3:nazevZdroje
Journal of Electrical Engineering
n3:obor
n15:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
4
n3:projekt
n13:1M06031
n3:rokUplatneniVysledku
n14:2009
n3:svazekPeriodika
60
n3:tvurceVysledku
Netrvalová, Marie Šutta, Pavol Vavruňková, Veronika Müllerová, Jarmila
n3:wos
000271846100008
s:issn
1335-3632
s:numberOfPages
4
n6:organizacniJednotka
23640