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Statements

Subject Item
n2:RIV%2F49777513%3A23640%2F07%3A00501167%21RIV10-MSM-23640___
rdf:type
n15:Vysledek skos:Concept
dcterms:description
We report on the structure and optical properties of hydrogenated silicon thin films deposited by plasma - enhanced chemical vapor deposition (PECVD) from silane diluted with hydrogen in a wide dilution range. The samples deposited with dilutions below 30 were detected as amorphous hydrogenated silicon (a-Si:H) with crystalline grains of several nanometers in size which represent the medium-range order of a-Si:H. The optical characterization confirmed increasing ordering with the increasing dilution. The optical band gap was observed to be increasing function of the dilution. We report on the structure and optical properties of hydrogenated silicon thin films deposited by plasma - enhanced chemical vapor deposition (PECVD) from silane diluted with hydrogen in a wide dilution range. The samples deposited with dilutions below 30 were detected as amorphous hydrogenated silicon (a-Si:H) with crystalline grains of several nanometers in size which represent the medium-range order of a-Si:H. The optical characterization confirmed increasing ordering with the increasing dilution. The optical band gap was observed to be increasing function of the dilution.
dcterms:title
Microstructure related characterization of a-Si:H thin films PECVD deposited under varied hydrogen dilution Microstructure related characterization of a-Si:H thin films PECVD deposited under varied hydrogen dilution
skos:prefLabel
Microstructure related characterization of a-Si:H thin films PECVD deposited under varied hydrogen dilution Microstructure related characterization of a-Si:H thin films PECVD deposited under varied hydrogen dilution
skos:notation
RIV/49777513:23640/07:00501167!RIV10-MSM-23640___
n3:aktivita
n17:P
n3:aktivity
P(1M06031)
n3:cisloPeriodika
3
n3:dodaniDat
n7:2010
n3:domaciTvurceVysledku
n12:2891484 n12:8498989
n3:druhVysledku
n18:J
n3:duvernostUdaju
n5:S
n3:entitaPredkladatele
n4:predkladatel
n3:idSjednocenehoVysledku
433798
n3:idVysledku
RIV/49777513:23640/07:00501167
n3:jazykVysledku
n11:eng
n3:klicovaSlova
a-Si:H; XRD analysis; optical properties
n3:klicoveSlovo
n6:XRD%20analysis n6:a-Si%3AH n6:optical%20properties
n3:kodStatuVydavatele
SK - Slovenská republika
n3:kontrolniKodProRIV
[21F75584495E]
n3:nazevZdroje
Advances in Electrical and Electronic Engineering
n3:obor
n9:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
3
n3:projekt
n16:1M06031
n3:rokUplatneniVysledku
n7:2007
n3:svazekPeriodika
6
n3:tvurceVysledku
Vavruňková, Veronika Šutta, Pavol Müllerová, Jarmila
s:issn
1336-1376
s:numberOfPages
4
n14:organizacniJednotka
23640