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Statements

Subject Item
n2:RIV%2F49777513%3A23640%2F03%3A00000163%21RIV%2F2004%2FMSM%2F236404%2FN
rdf:type
skos:Concept n18:Vysledek
dcterms:description
A new mechanism for dislocation elimination during the growth is proposed to explain the configuration of thermal gradient is illustrated for various types of crucible rotation, which is important for the creation of dislocations, which decreases along the grown axis of crystal. A new mechanism for dislocation elimination during the growth is proposed to explain the configuration of thermal gradient is illustrated for various types of crucible rotation, which is important for the creation of dislocations, which decreases along the grown axis of crystal.
dcterms:title
Thermal conditions of growth and the necking evolution of Si, GaSb and GaAs Thermal conditions of growth and the necking evolution of Si, GaSb and GaAs
skos:prefLabel
Thermal conditions of growth and the necking evolution of Si, GaSb and GaAs Thermal conditions of growth and the necking evolution of Si, GaSb and GaAs
skos:notation
RIV/49777513:23640/03:00000163!RIV/2004/MSM/236404/N
n3:strany
165-172
n3:aktivita
n12:Z
n3:aktivity
Z(MSM 230000009)
n3:cisloPeriodika
0
n3:dodaniDat
n14:2004
n3:domaciTvurceVysledku
n8:4115910
n3:druhVysledku
n4:J
n3:duvernostUdaju
n7:S
n3:entitaPredkladatele
n11:predkladatel
n3:idSjednocenehoVysledku
630885
n3:idVysledku
RIV/49777513:23640/03:00000163
n3:jazykVysledku
n15:eng
n3:klicovaSlova
doping;gallium antimonide;low dislocation;density;single crystal growth;thermal gradients
n3:klicoveSlovo
n13:density n13:single%20crystal%20growth n13:doping n13:thermal%20gradients n13:low%20dislocation n13:gallium%20antimonide
n3:kodStatuVydavatele
HU - Maďarsko
n3:kontrolniKodProRIV
[82F6DE73F479]
n3:nazevZdroje
Journal of Thermal Analysis and Calorimetry
n3:obor
n17:BJ
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
4
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:rokUplatneniVysledku
n14:2003
n3:svazekPeriodika
Neuveden
n3:tvurceVysledku
Šesták, Jaroslav Štěpánek, B. Mareš, J. J. Šestáková, V.
n3:zamer
n16:MSM%20230000009
s:issn
1388-6150
s:numberOfPages
8
n9:organizacniJednotka
23640