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Statements

Subject Item
n2:RIV%2F49777513%3A23520%2F14%3A43922535%21RIV15-GA0-23520___
rdf:type
n12:Vysledek skos:Concept
rdfs:seeAlso
http://www.sciencedirect.com/science/article/pii/S0040609014007548
dcterms:description
High-power impulse magnetron sputtering of a planar Ta target in various Ar+O2+N2 gas mixtures was investigated. A strongly unbalanced magnetron was driven by a pulsed dc power supply at the average target power density in a pulse. Si (100) and glass substrates were at a floating potential, and the substrate temperatures were less than 285 °C. A pulsed reactive gas (O2 and N2) flow control made it possible to produce high-quality Ta-O-N films of various elemental compositions with high deposition rates of 97 - 190 nm/min. The film compositions (in at.%) were varied gradually from Ta28O71 with less than 1 at. % of H to Ta38O4N55 with 3 at. % of H. The Ta27O40N31 films with 2 at. % of H, which were produced with the highest deposition rate of 190 nm/min, were nanocrystalline with an optical band gap of 2.5 eV. These films with a shift of the absorption edge to 500 nm are potential candidates for application as visible-light driven photocatalysts. High-power impulse magnetron sputtering of a planar Ta target in various Ar+O2+N2 gas mixtures was investigated. A strongly unbalanced magnetron was driven by a pulsed dc power supply at the average target power density in a pulse. Si (100) and glass substrates were at a floating potential, and the substrate temperatures were less than 285 °C. A pulsed reactive gas (O2 and N2) flow control made it possible to produce high-quality Ta-O-N films of various elemental compositions with high deposition rates of 97 - 190 nm/min. The film compositions (in at.%) were varied gradually from Ta28O71 with less than 1 at. % of H to Ta38O4N55 with 3 at. % of H. The Ta27O40N31 films with 2 at. % of H, which were produced with the highest deposition rate of 190 nm/min, were nanocrystalline with an optical band gap of 2.5 eV. These films with a shift of the absorption edge to 500 nm are potential candidates for application as visible-light driven photocatalysts.
dcterms:title
High-rate reactive high-power impulse magnetron sputtering of Ta-O-N films with tunable composition and properties High-rate reactive high-power impulse magnetron sputtering of Ta-O-N films with tunable composition and properties
skos:prefLabel
High-rate reactive high-power impulse magnetron sputtering of Ta-O-N films with tunable composition and properties High-rate reactive high-power impulse magnetron sputtering of Ta-O-N films with tunable composition and properties
skos:notation
RIV/49777513:23520/14:43922535!RIV15-GA0-23520___
n4:aktivita
n15:P
n4:aktivity
P(GA14-03875S)
n4:cisloPeriodika
566
n4:dodaniDat
n10:2015
n4:domaciTvurceVysledku
n8:1975714 n8:3554392 n8:9684328 n8:2650754
n4:druhVysledku
n17:J
n4:duvernostUdaju
n11:S
n4:entitaPredkladatele
n6:predkladatel
n4:idSjednocenehoVysledku
19157
n4:idVysledku
RIV/49777513:23520/14:43922535
n4:jazykVysledku
n18:eng
n4:klicovaSlova
Hardness; Electrical conductivity; Optical properties; Tunable properties; Ta-O-N; High deposition rates; Reactive HiPIMS
n4:klicoveSlovo
n9:Tunable%20properties n9:Ta-O-N n9:High%20deposition%20rates n9:Reactive%20HiPIMS n9:Hardness n9:Electrical%20conductivity n9:Optical%20properties
n4:kodStatuVydavatele
NL - Nizozemsko
n4:kontrolniKodProRIV
[367AA2589917]
n4:nazevZdroje
Thin Solid Films
n4:obor
n19:BL
n4:pocetDomacichTvurcuVysledku
4
n4:pocetTvurcuVysledku
4
n4:projekt
n20:GA14-03875S
n4:rokUplatneniVysledku
n10:2014
n4:svazekPeriodika
2014
n4:tvurceVysledku
Rezek, Jiří Vlček, Jaroslav Houška, Jiří Čerstvý, Radomír
n4:wos
000341057300012
s:issn
0040-6090
s:numberOfPages
8
n16:doi
10.1016/j.tsf.2014.07.033
n3:organizacniJednotka
23520