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Statements

Subject Item
n2:RIV%2F49777513%3A23520%2F13%3A43918961%21RIV14-MSM-23520___
rdf:type
n3:Vysledek skos:Concept
rdfs:seeAlso
http://dx.doi.org/10.1016/j.tsf.2013.07.013
dcterms:description
In this work, we have employed high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and nano indentation to study the microstructure of Si-B-C-N films treated at high temperatures. Si-B-C-N films with a chemical composition of Si30-32B10-12C2-4N49-51 were deposited in a 50% Ar/50% N2 gas mixture by pulsed DC magnetron sputtering. In order to study the microstructure at elevated temperatures of the films, they were subjected to annealing at temperatures up to (i) 1400 °C in He and (ii) 1700 °C in air. XPS studies showed that annealing to 1400 °C in He does not affect the chemical composition of the film, while annealing to 1700 °C in air results in the oxidation of the film via the loss of N and B and formation of SiOx. HRTEM studies demonstrated that the as-deposited film and the film annealed to 1400 °C in He are amorphous. A three layer structure was found in the film annealed to 1700 °C in air: the original amorphous Si-B-C-N base-layer, a transition nanocomposite layer consisting of BN nanocrystals embedded in a SiOx amorphous matrix, and an amorphous SiOx top layer. The present evidence suggests that O reacts with Si in the Si-B-C-N amorphous structure resulting in the formation of SiOx and concomitant nucleation of BN crystals at the base/transition layer interface. Nano-indentation tests show that the film annealed to 1400 °C in He has a hardness of 22.1 GPa and a modulus of 210.8 GPa, higher than that of the as-deposited film (19.5 and 204.9 GPa), whereas the values for the film annealed to 1700 °C in air (9.8 and 76.5 GPa) simply reflect those of the SiOx top layer. The high oxidation resistance of the films is attributed to the presence of BN in front of the base layer interface that can act as a barrier to O diffusion. In this work, we have employed high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and nano indentation to study the microstructure of Si-B-C-N films treated at high temperatures. Si-B-C-N films with a chemical composition of Si30-32B10-12C2-4N49-51 were deposited in a 50% Ar/50% N2 gas mixture by pulsed DC magnetron sputtering. In order to study the microstructure at elevated temperatures of the films, they were subjected to annealing at temperatures up to (i) 1400 °C in He and (ii) 1700 °C in air. XPS studies showed that annealing to 1400 °C in He does not affect the chemical composition of the film, while annealing to 1700 °C in air results in the oxidation of the film via the loss of N and B and formation of SiOx. HRTEM studies demonstrated that the as-deposited film and the film annealed to 1400 °C in He are amorphous. A three layer structure was found in the film annealed to 1700 °C in air: the original amorphous Si-B-C-N base-layer, a transition nanocomposite layer consisting of BN nanocrystals embedded in a SiOx amorphous matrix, and an amorphous SiOx top layer. The present evidence suggests that O reacts with Si in the Si-B-C-N amorphous structure resulting in the formation of SiOx and concomitant nucleation of BN crystals at the base/transition layer interface. Nano-indentation tests show that the film annealed to 1400 °C in He has a hardness of 22.1 GPa and a modulus of 210.8 GPa, higher than that of the as-deposited film (19.5 and 204.9 GPa), whereas the values for the film annealed to 1700 °C in air (9.8 and 76.5 GPa) simply reflect those of the SiOx top layer. The high oxidation resistance of the films is attributed to the presence of BN in front of the base layer interface that can act as a barrier to O diffusion.
dcterms:title
Microstructure characterization of high-temperature, oxidation-resistant Si-B-C-N films Microstructure characterization of high-temperature, oxidation-resistant Si-B-C-N films
skos:prefLabel
Microstructure characterization of high-temperature, oxidation-resistant Si-B-C-N films Microstructure characterization of high-temperature, oxidation-resistant Si-B-C-N films
skos:notation
RIV/49777513:23520/13:43918961!RIV14-MSM-23520___
n3:predkladatel
n7:orjk%3A23520
n5:aktivita
n20:I
n5:aktivity
I
n5:cisloPeriodika
Neuveden
n5:dodaniDat
n10:2014
n5:domaciTvurceVysledku
n11:1975714 n11:8233152 n11:8632340
n5:druhVysledku
n19:J
n5:duvernostUdaju
n18:S
n5:entitaPredkladatele
n13:predkladatel
n5:idSjednocenehoVysledku
88246
n5:idVysledku
RIV/49777513:23520/13:43918961
n5:jazykVysledku
n14:eng
n5:klicovaSlova
x-ray photoelectron spectroscopy; transmission electron microscopy; pulsed dc magnetron sputtering; microstructure; Thermal barrier coatings
n5:klicoveSlovo
n6:microstructure n6:Thermal%20barrier%20coatings n6:pulsed%20dc%20magnetron%20sputtering n6:transmission%20electron%20microscopy n6:x-ray%20photoelectron%20spectroscopy
n5:kodStatuVydavatele
US - Spojené státy americké
n5:kontrolniKodProRIV
[C0F10A6B4A81]
n5:nazevZdroje
Thin Solid Films
n5:obor
n17:BL
n5:pocetDomacichTvurcuVysledku
3
n5:pocetTvurcuVysledku
7
n5:rokUplatneniVysledku
n10:2013
n5:svazekPeriodika
542
n5:tvurceVysledku
Vlček, Jaroslav Meletis, Efstathios I. Steidl, Petr He, Jie Zhang, Minghui Jiang, Jiechao Zeman, Petr
n5:wos
000323859400028
s:issn
0040-6090
s:numberOfPages
7
n4:doi
10.1016/j.tsf.2013.07.013
n9:organizacniJednotka
23520