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Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n11http://localhost/temp/predkladatel/
n14http://linked.opendata.cz/resource/domain/vavai/projekt/
n4http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n16http://linked.opendata.cz/resource/domain/vavai/subjekt/
n8http://linked.opendata.cz/ontology/domain/vavai/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n15http://bibframe.org/vocab/
n12http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F49777513%3A23520%2F13%3A43916989%21RIV14-MSM-23520___/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n7http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n9http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n18http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n5http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n20http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n19http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n10http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F49777513%3A23520%2F13%3A43916989%21RIV14-MSM-23520___
rdf:type
n8:Vysledek skos:Concept
dcterms:description
We present a model analysis of a high-power impulse magnetron sputtering of copper. A non-stationary two-zone model was used to calculate the deposition rate and the ionized fraction of sputtered copper atoms in the flux onto the substrate for various pulse lengths (20 ? 400 microseconds), pulse shapes (a fixed target voltage of 900 V and stepwise ascending (800 ? 1000 V) or descending (1000 ? 800 V) target voltages), repetition frequencies (100 ? 2000 Hz) and magnetic field strengths in front of the target (350 ? 450 G) at an argon pressure of 1 Pa. We show that sufficiently long pulses (at least 100 microseconds) which allow for the build-up of a high density plasma in front of the target (diameter of 50 mm) are necessary to achieve high target power densities in a pulse and consequently, high degrees of ionization of the sputtered atoms. However, the high degree of ionization of the sputtered copper atoms leads necessarily to lower deposition rates when compared to the dc magnetron sputtering at the same target power density. This is mainly due to the return of ionized sputtered atoms onto the target. The model results show that the average target power density in a pulse is, besides the target voltage, a fundamental quantity which determines the average ionized fraction of sputtered atoms in the flux onto the substrate and the deposition rate per average target power density in a period applied to the discharge. Such model calculations can be beneficial for determining the optimum working conditions for specific deposition applications. We present a model analysis of a high-power impulse magnetron sputtering of copper. A non-stationary two-zone model was used to calculate the deposition rate and the ionized fraction of sputtered copper atoms in the flux onto the substrate for various pulse lengths (20 ? 400 microseconds), pulse shapes (a fixed target voltage of 900 V and stepwise ascending (800 ? 1000 V) or descending (1000 ? 800 V) target voltages), repetition frequencies (100 ? 2000 Hz) and magnetic field strengths in front of the target (350 ? 450 G) at an argon pressure of 1 Pa. We show that sufficiently long pulses (at least 100 microseconds) which allow for the build-up of a high density plasma in front of the target (diameter of 50 mm) are necessary to achieve high target power densities in a pulse and consequently, high degrees of ionization of the sputtered atoms. However, the high degree of ionization of the sputtered copper atoms leads necessarily to lower deposition rates when compared to the dc magnetron sputtering at the same target power density. This is mainly due to the return of ionized sputtered atoms onto the target. The model results show that the average target power density in a pulse is, besides the target voltage, a fundamental quantity which determines the average ionized fraction of sputtered atoms in the flux onto the substrate and the deposition rate per average target power density in a period applied to the discharge. Such model calculations can be beneficial for determining the optimum working conditions for specific deposition applications.
dcterms:title
Effect of the voltage pulse characteristics on high-power impulse magnetron sputtering of copper Effect of the voltage pulse characteristics on high-power impulse magnetron sputtering of copper
skos:prefLabel
Effect of the voltage pulse characteristics on high-power impulse magnetron sputtering of copper Effect of the voltage pulse characteristics on high-power impulse magnetron sputtering of copper
skos:notation
RIV/49777513:23520/13:43916989!RIV14-MSM-23520___
n8:predkladatel
n16:orjk%3A23520
n3:aktivita
n5:P
n3:aktivity
P(OC10045)
n3:cisloPeriodika
22
n3:dodaniDat
n10:2014
n3:domaciTvurceVysledku
n4:1975714 n4:7741715
n3:druhVysledku
n19:J
n3:duvernostUdaju
n9:S
n3:entitaPredkladatele
n12:predkladatel
n3:idSjednocenehoVysledku
71811
n3:idVysledku
RIV/49777513:23520/13:43916989
n3:jazykVysledku
n18:eng
n3:klicovaSlova
Deposition rate; Non-stationary model; HiPIMS; High-power magnetron sputtering
n3:klicoveSlovo
n7:High-power%20magnetron%20sputtering n7:HiPIMS n7:Deposition%20rate n7:Non-stationary%20model
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[0D6D1ACF4AB3]
n3:nazevZdroje
PLASMA SOURCES SCIENCE & TECHNOLOGY
n3:obor
n20:BL
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
2
n3:projekt
n14:OC10045
n3:rokUplatneniVysledku
n10:2013
n3:svazekPeriodika
2013
n3:tvurceVysledku
Vlček, Jaroslav Kozák, Tomáš
n3:wos
000314966300014
s:issn
0963-0252
s:numberOfPages
9
n15:doi
10.1088/0963-0252/22/1/015009
n11:organizacniJednotka
23520