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Statements

Subject Item
n2:RIV%2F49777513%3A23520%2F11%3A43898420%21RIV12-MSM-23520___
rdf:type
skos:Concept n13:Vysledek
dcterms:description
Amorphous SiBCN materials were prepared using reactive magnetron sputtering, and their structure, electronic structure and electrical and optical properties were studied using a combined approach of experiment and ab initio calculations. We focus on the effect of N content over a wide range on the material properties. We find that decreasing the N content (from 54 to 0 at.%) decreases the electrical resistivity (from }10^8 to 0.2 ohm meter) and the optical gap (from 3.5 eV to almost 0), and explain the effect in terms of the band gap and the localization of electronic states. The results allow one to tailor SiBCN compositions which can combine different functional properties, such as high thermal stability and electrical conductivity. Amorphous SiBCN materials were prepared using reactive magnetron sputtering, and their structure, electronic structure and electrical and optical properties were studied using a combined approach of experiment and ab initio calculations. We focus on the effect of N content over a wide range on the material properties. We find that decreasing the N content (from 54 to 0 at.%) decreases the electrical resistivity (from }10^8 to 0.2 ohm meter) and the optical gap (from 3.5 eV to almost 0), and explain the effect in terms of the band gap and the localization of electronic states. The results allow one to tailor SiBCN compositions which can combine different functional properties, such as high thermal stability and electrical conductivity.
dcterms:title
Effect of nitrogen content on electronic structure and properties of SiBCN materials Effect of nitrogen content on electronic structure and properties of SiBCN materials
skos:prefLabel
Effect of nitrogen content on electronic structure and properties of SiBCN materials Effect of nitrogen content on electronic structure and properties of SiBCN materials
skos:notation
RIV/49777513:23520/11:43898420!RIV12-MSM-23520___
n13:predkladatel
n14:orjk%3A23520
n3:aktivita
n9:Z
n3:aktivity
Z(MSM4977751302)
n3:cisloPeriodika
6
n3:dodaniDat
n10:2012
n3:domaciTvurceVysledku
n6:3554392 n6:1975714 n6:7810830 n6:1072595 n6:6511333
n3:druhVysledku
n20:J
n3:duvernostUdaju
n5:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
196378
n3:idVysledku
RIV/49777513:23520/11:43898420
n3:jazykVysledku
n15:eng
n3:klicovaSlova
bonding structure; optical transmission; electronic band structure; ab initio calculations; SiBCN materials
n3:klicoveSlovo
n7:electronic%20band%20structure n7:SiBCN%20materials n7:bonding%20structure n7:optical%20transmission n7:ab%20initio%20calculations
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[619FA0FCE29E]
n3:nazevZdroje
Acta Materialia
n3:obor
n16:BL
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
5
n3:rokUplatneniVysledku
n10:2011
n3:svazekPeriodika
59
n3:tvurceVysledku
Kos, Šimon Calta, Pavel Vlček, Jaroslav Houška, Jiří Petrman, Vít
n3:zamer
n4:MSM4977751302
s:issn
1359-6454
s:numberOfPages
9
n8:doi
10.1016/j.actamat.2010.12.030
n19:organizacniJednotka
23520