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Statements

Subject Item
n2:RIV%2F49777513%3A23520%2F11%3A43896514%21RIV12-MSM-23520___
rdf:type
skos:Concept n16:Vysledek
dcterms:description
In this study, thermal transport was investigated for ceramic films with different silicon, boron, carbon, and nitrogen (Si-B-C-N) compositions. In order to investigate the effect of morphology on thermal barrier properties, the microstructure of these materials was varied from amorphous to nanocrystalline. Thermal conductivity trends of several ceramic thin films were characterized with a TDTR technique. Samples containing two different Si-B-C-N chemical compositions were created by reactive magnetron sputtering and then subjected to annealing at temperatures up to 1400 °C. The room temperature thermal conductivity of the samples prepared via a 50% argon/50% nitrogen gas mixture remained constant, while samples prepared via a 75% argon/25% nitrogen gas mixture exhibited an increase in the thermal conductivity. The experiments reveal which Si-B-C-N film composition remains stable in the amorphous state at high temperatures, thereby retaining lower thermal transport properties. In this study, thermal transport was investigated for ceramic films with different silicon, boron, carbon, and nitrogen (Si-B-C-N) compositions. In order to investigate the effect of morphology on thermal barrier properties, the microstructure of these materials was varied from amorphous to nanocrystalline. Thermal conductivity trends of several ceramic thin films were characterized with a TDTR technique. Samples containing two different Si-B-C-N chemical compositions were created by reactive magnetron sputtering and then subjected to annealing at temperatures up to 1400 °C. The room temperature thermal conductivity of the samples prepared via a 50% argon/50% nitrogen gas mixture remained constant, while samples prepared via a 75% argon/25% nitrogen gas mixture exhibited an increase in the thermal conductivity. The experiments reveal which Si-B-C-N film composition remains stable in the amorphous state at high temperatures, thereby retaining lower thermal transport properties.
dcterms:title
Thermal conductivity of high-temperature Si-B-C-N thin films Thermal conductivity of high-temperature Si-B-C-N thin films
skos:prefLabel
Thermal conductivity of high-temperature Si-B-C-N thin films Thermal conductivity of high-temperature Si-B-C-N thin films
skos:notation
RIV/49777513:23520/11:43896514!RIV12-MSM-23520___
n16:predkladatel
n17:orjk%3A23520
n3:aktivita
n10:Z n10:P
n3:aktivity
P(OC10045), Z(MSM4977751302)
n3:cisloPeriodika
7
n3:dodaniDat
n8:2012
n3:domaciTvurceVysledku
n21:8632340 n21:1975714
n3:druhVysledku
n19:J
n3:duvernostUdaju
n4:S
n3:entitaPredkladatele
n6:predkladatel
n3:idSjednocenehoVysledku
235152
n3:idVysledku
RIV/49777513:23520/11:43896514
n3:jazykVysledku
n14:eng
n3:klicovaSlova
X-ray diffraction; reactive magnetron sputtering; time-domain thermoreflectance; thermal barrier coatings
n3:klicoveSlovo
n7:thermal%20barrier%20coatings n7:reactive%20magnetron%20sputtering n7:time-domain%20thermoreflectance n7:X-ray%20diffraction
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[0C9209398929]
n3:nazevZdroje
Surface & Coatings Technology
n3:obor
n12:BL
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
6
n3:projekt
n20:OC10045
n3:rokUplatneniVysledku
n8:2011
n3:svazekPeriodika
206
n3:tvurceVysledku
Voevodin, Andrey A. Jones, John G. Hu, Jianjun Gengler, Jamie J. Vlček, Jaroslav Steidl, Petr
n3:zamer
n18:MSM4977751302
s:issn
0257-8972
s:numberOfPages
4
n15:doi
10.1016/j.surfcoat.2011.07.058
n13:organizacniJednotka
23520