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Statements

Subject Item
n2:RIV%2F49777513%3A23520%2F10%3A00503542%21RIV11-MSM-23520___
rdf:type
skos:Concept n17:Vysledek
dcterms:description
Thermal stability of deposited Si-B-C-N materials (film fragments or powders without a substrate) in inert gases (He and Ar) up to 1700 °C was investigated using differential scanning calorimetry, high-resolution thermogravimetry and X-ray diffraction measurements. Amorphous Si-B-C-N films were fabricated by dc magnetron co-sputtering of a single B4C-Si target in two nitrogen-argon gas mixtures (50% N2 + 50% Ar or 25% N2 + 75% Ar). It was found that the deposited Si-B-C-N materials can be more stable at high temperatures in the inert atmosphere than the usually used substrates (e.g. SiC or BN). The materials with the compositions (in at.%) Si32-33B10C2N50-51, for which N/(Si+B+C)=1.1-1.2, retained their amorphous structure up to 1600 °C without any structural transformations and detectable mass changes. Thermal stability of deposited Si-B-C-N materials (film fragments or powders without a substrate) in inert gases (He and Ar) up to 1700 °C was investigated using differential scanning calorimetry, high-resolution thermogravimetry and X-ray diffraction measurements. Amorphous Si-B-C-N films were fabricated by dc magnetron co-sputtering of a single B4C-Si target in two nitrogen-argon gas mixtures (50% N2 + 50% Ar or 25% N2 + 75% Ar). It was found that the deposited Si-B-C-N materials can be more stable at high temperatures in the inert atmosphere than the usually used substrates (e.g. SiC or BN). The materials with the compositions (in at.%) Si32-33B10C2N50-51, for which N/(Si+B+C)=1.1-1.2, retained their amorphous structure up to 1600 °C without any structural transformations and detectable mass changes.
dcterms:title
Thermal stability of magnetron sputtered Si-B-C-N materials at temperatures up to 1700 °C Thermal stability of magnetron sputtered Si-B-C-N materials at temperatures up to 1700 °C
skos:prefLabel
Thermal stability of magnetron sputtered Si-B-C-N materials at temperatures up to 1700 °C Thermal stability of magnetron sputtered Si-B-C-N materials at temperatures up to 1700 °C
skos:notation
RIV/49777513:23520/10:00503542!RIV11-MSM-23520___
n3:aktivita
n12:Z
n3:aktivity
Z(MSM4977751302)
n3:cisloPeriodika
1
n3:dodaniDat
n6:2011
n3:domaciTvurceVysledku
n9:8233152 n9:9684328 n9:7242166 n9:1975714
n3:druhVysledku
n14:J
n3:duvernostUdaju
n11:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
292743
n3:idVysledku
RIV/49777513:23520/10:00503542
n3:jazykVysledku
n16:eng
n3:klicovaSlova
Si-B-C-N films; thin films; thermal stability; differential scanning calorimetry; thermogravimetry; X-ray diffraction; reactive sputtering
n3:klicoveSlovo
n8:X-ray%20diffraction n8:Si-B-C-N%20films n8:differential%20scanning%20calorimetry n8:reactive%20sputtering n8:thermal%20stability n8:thin%20films n8:thermogravimetry
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[001976E6FE9F]
n3:nazevZdroje
Thin Solid Films
n3:obor
n13:BL
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
4
n3:rokUplatneniVysledku
n6:2010
n3:svazekPeriodika
519
n3:tvurceVysledku
Čerstvý, Radomír Čapek, Jiří Vlček, Jaroslav Zeman, Petr
n3:wos
000283955200054
n3:zamer
n7:MSM4977751302
s:issn
0040-6090
s:numberOfPages
6
n15:organizacniJednotka
23520