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Statements

Subject Item
n2:RIV%2F49777513%3A23520%2F06%3A00000230%21RIV07-MSM-23520___
rdf:type
n9:Vysledek skos:Concept
dcterms:description
Amorphous Si-B-C-N alloys were deposited by reactive magnetron sputtering, and their high-temperature stability was investigated using a combined approach of experiment and molecular-dynamics simulations. We show that both a higher Si/C ratio and the addition of boron improve the thermal stability of the materials. We find that lifetimes of bonds of the same type are significantly longer at the higher Si/C ratio. The addition of boron results in a conversion of some of the electrons in lone pairs associated with nitrogen to bonding electrons.This increases the network's average coordination number. In both cases, the higher network coordination number and resulting lower diffusion, expressed in terms of longer bond lifetimes, shift decomposition reactions in materials to higher temperatures. Amorfní materiály byly vytvářeny pomocí reaktivního magnetronového naprašování a jejich vysokoteplotní stabilita byla zkoumána experimentálně a pomocí MD simulací. Bylo ukázáno, že teploní stabilita roste s poměrem Si/C a v důsledku přidání boru. Životnost stejných vazeb je při vyšším poměru Si/C výrazně delší. Přidání boru vede ke konverzi některých volných párů valenčních elektronů asociovaných s N na valenční elektrony, což zvyšuje celkové koordinační číslo. Oba tyto jevy posouvají rozkladné reakce v materiálech k vyšším teplotám. Amorphous Si-B-C-N alloys were deposited by reactive magnetron sputtering, and their high-temperature stability was investigated using a combined approach of experiment and molecular-dynamics simulations. We show that both a higher Si/C ratio and the addition of boron improve the thermal stability of the materials. We find that lifetimes of bonds of the same type are significantly longer at the higher Si/C ratio. The addition of boron results in a conversion of some of the electrons in lone pairs associated with nitrogen to bonding electrons.This increases the network's average coordination number. In both cases, the higher network coordination number and resulting lower diffusion, expressed in terms of longer bond lifetimes, shift decomposition reactions in materials to higher temperatures.
dcterms:title
Effect of B and Si/C ratio on high-temperature stability of Si-B-C-N materials Vliv obsahu B a poměru Si/C na vysokoteplotní stabilitu materiálů Si-B-C-N Effect of B and Si/C ratio on high-temperature stability of Si-B-C-N materials
skos:prefLabel
Effect of B and Si/C ratio on high-temperature stability of Si-B-C-N materials Effect of B and Si/C ratio on high-temperature stability of Si-B-C-N materials Vliv obsahu B a poměru Si/C na vysokoteplotní stabilitu materiálů Si-B-C-N
skos:notation
RIV/49777513:23520/06:00000230!RIV07-MSM-23520___
n3:strany
512
n3:aktivita
n8:Z
n3:aktivity
Z(MSM4977751302)
n3:cisloPeriodika
0
n3:dodaniDat
n17:2007
n3:domaciTvurceVysledku
n10:1975714 n10:6620752 n10:3554392
n3:druhVysledku
n14:J
n3:duvernostUdaju
n18:S
n3:entitaPredkladatele
n11:predkladatel
n3:idSjednocenehoVysledku
472965
n3:idVysledku
RIV/49777513:23520/06:00000230
n3:jazykVysledku
n13:eng
n3:klicovaSlova
Si-B-C-N materials; temperature stability; molecular dynamics; N2 molecules formation; bond lifetimes
n3:klicoveSlovo
n4:molecular%20dynamics n4:Si-B-C-N%20materials n4:bond%20lifetimes n4:N2%20molecules%20formation n4:temperature%20stability
n3:kodStatuVydavatele
FR - Francouzská republika
n3:kontrolniKodProRIV
[8594A64A7C19]
n3:nazevZdroje
Europhysics Letters
n3:obor
n12:BL
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
5
n3:rokUplatneniVysledku
n17:2006
n3:tvurceVysledku
Hřeben, Stanislav Houška, Jiří Bilek, Marcela Vlček, Jaroslav McKenzie, David
n3:zamer
n16:MSM4977751302
s:issn
0295-5075
s:numberOfPages
7
n7:organizacniJednotka
23520