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Statements

Subject Item
n2:RIV%2F49777513%3A23520%2F06%3A00000130%21RIV07-MSM-23520___
rdf:type
skos:Concept n15:Vysledek
dcterms:description
We report on the results of measurement of the temperature TFsurf which developed on the surface of films deposited by magnetron sputtering of chromium and copper targets on cooling and non-cooling silicon substrates. The TFsurf and substrate temperature (TS) were simultaneously measured using high-resolution IR camera and thermocouple, respectively. We revealed that the TFsurf steeply grows, keeps constant when it achieves saturation level, and rapidly drops to the value of the TS after stopping the deposition. At the same time, the TS either does not change for the case of cooling substrate or increases to a certain level for non-cooling substrate. However, in both cases the TS remains several times lower than the TFsurf. The TFsurf is proportional to the flux of energy delivered to the growth surface by sputtered atoms and other fast particles, weakly depends on the depositing metal and can achieve several hundreds of °C. We report on the results of measurement of the temperature TFsurf which developed on the surface of films deposited by magnetron sputtering of chromium and copper targets on cooling and non-cooling silicon substrates. The TFsurf and substrate temperature (TS) were simultaneously measured using high-resolution IR camera and thermocouple, respectively. We revealed that the TFsurf steeply grows, keeps constant when it achieves saturation level, and rapidly drops to the value of the TS after stopping the deposition. At the same time, the TS either does not change for the case of cooling substrate or increases to a certain level for non-cooling substrate. However, in both cases the TS remains several times lower than the TFsurf. The TFsurf is proportional to the flux of energy delivered to the growth surface by sputtered atoms and other fast particles, weakly depends on the depositing metal and can achieve several hundreds of °C. Tento článek pojednává o výsledcích měření povrchové teploty TFsurf, která vzniká na povrchu tenké vrstvy deponované magnetronovým naprašováním chromových a měděných terčů na chlazené a nechlazené křemíkové substráty. Teplota TFsurf a teplota substrátu (TS) byly simultánně měřeny IR kamerou s vysokým rozlišením a zároveň termočlánkem. Bylo zjištěno, že TFsurf prudce roste, dosahuje konstantních hodnot při dosažení saturační meze a prudce klesá na hodnotu TS po vypnutí depozice. Současně, TS se nemění v případě použití chlazeného substrátu nebo roste na určitou hodnotu v případě použití nechlazeného substrátu. Přesto ovšem TS dosahuje hodn
dcterms:title
Evolution of film temperature during magnetron sputtering Vývoj teploty tenké vrstvy během magnetronového naprašování Evolution of film temperature during magnetron sputtering
skos:prefLabel
Evolution of film temperature during magnetron sputtering Vývoj teploty tenké vrstvy během magnetronového naprašování Evolution of film temperature during magnetron sputtering
skos:notation
RIV/49777513:23520/06:00000130!RIV07-MSM-23520___
n4:strany
1083
n4:aktivita
n11:Z
n4:aktivity
Z(MSM4977751302)
n4:cisloPeriodika
0
n4:dodaniDat
n9:2007
n4:domaciTvurceVysledku
n14:9269606
n4:druhVysledku
n6:J
n4:duvernostUdaju
n12:S
n4:entitaPredkladatele
n8:predkladatel
n4:idSjednocenehoVysledku
474835
n4:idVysledku
RIV/49777513:23520/06:00000130
n4:jazykVysledku
n17:eng
n4:klicovaSlova
substrate temperature; surface of the film temperature; magnetron sputtering; temperature measurement
n4:klicoveSlovo
n10:temperature%20measurement n10:magnetron%20sputtering n10:surface%20of%20the%20film%20temperature n10:substrate%20temperature
n4:kodStatuVydavatele
US - Spojené státy americké
n4:kontrolniKodProRIV
[A0D0E4A1E47C]
n4:nazevZdroje
Journal of Vacuum Science and Technology A
n4:obor
n13:BL
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
4
n4:rokUplatneniVysledku
n9:2006
n4:tvurceVysledku
Han, J. G. Musil, Jindřich Shaginyan, L. R. Shaginyan, V. R.
n4:zamer
n16:MSM4977751302
s:issn
0734-2101
s:numberOfPages
8
n7:organizacniJednotka
23520