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Statements

Subject Item
n2:RIV%2F49777513%3A23520%2F06%3A00000087%21RIV07-GA0-23520___
rdf:type
n15:Vysledek skos:Concept
dcterms:description
The high-temperature oxidation resistance of ternary Ta-Si-N films with a high Si content deposited by reactive dc magnetron sputtering on silicon substrates was systematically investigated by means of a symmetrical high-resolution thermogravimetry in a flowing air up to an annealing temperature of 1300°C. Additional analyses including optical microscopy, scanning electron microscopy, X-ray diffraction and the microhardness measurement were carried out as well Vysokoteplotní oxidační odolnost vrstev Ta-Si-N s vysokým obsahem Si připravených reaktivním magnetronovým naprašováním byla studována pomocí vysokorozlišovací termogravimetrie v proudícím vzduchu do teploty 1300°C. Výsledky ukázaly výbornou oxidační odolnost vrstev až do 1300°C. Neptrná oxiadce je spojena s vytvořením tenké povrchové vrstvy bránící další oxidaci objemu vrstvy. The high-temperature oxidation resistance of ternary Ta-Si-N films with a high Si content deposited by reactive dc magnetron sputtering on silicon substrates was systematically investigated by means of a symmetrical high-resolution thermogravimetry in a flowing air up to an annealing temperature of 1300°C. Additional analyses including optical microscopy, scanning electron microscopy, X-ray diffraction and the microhardness measurement were carried out as well
dcterms:title
High-temperature oxidation resistance of Ta-Si-N films with a high Si content Vysokoteplotní oxidační odolnost vrstev Ta-Si-N s vysokým obsahem Si High-temperature oxidation resistance of Ta-Si-N films with a high Si content
skos:prefLabel
High-temperature oxidation resistance of Ta-Si-N films with a high Si content Vysokoteplotní oxidační odolnost vrstev Ta-Si-N s vysokým obsahem Si High-temperature oxidation resistance of Ta-Si-N films with a high Si content
skos:notation
RIV/49777513:23520/06:00000087!RIV07-GA0-23520___
n3:strany
4091
n3:aktivita
n9:Z n9:P
n3:aktivity
P(GP106/03/D009), Z(MSM4977751302)
n3:cisloPeriodika
0
n3:dodaniDat
n7:2007
n3:domaciTvurceVysledku
n10:8233152 n10:7710836 n10:9269606
n3:druhVysledku
n18:J
n3:duvernostUdaju
n4:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
477730
n3:idVysledku
RIV/49777513:23520/06:00000087
n3:jazykVysledku
n16:eng
n3:klicovaSlova
Ta-Si-N films; oxidation resistance; thermogravimetry; sputtering
n3:klicoveSlovo
n5:oxidation%20resistance n5:sputtering n5:thermogravimetry n5:Ta-Si-N%20films
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[4448E739A641]
n3:nazevZdroje
Surface and Coatings Technology
n3:obor
n12:BL
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:projekt
n19:GP106%2F03%2FD009
n3:rokUplatneniVysledku
n7:2006
n3:tvurceVysledku
Musil, Jindřich Daniel, Rostislav Zeman, Petr
n3:zamer
n13:MSM4977751302
s:issn
0257-8972
s:numberOfPages
6
n17:organizacniJednotka
23520