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Statements

Subject Item
n2:RIV%2F49777513%3A23220%2F11%3A43925011%21RIV15-MSM-23220___
rdf:type
n16:Vysledek skos:Concept
rdfs:seeAlso
http://ieeexplore.ieee.org/search/srchabstract.jsp?tp=&arnumber=6053553&searchWithin%3DAuthors%3A.QT.Pretl%2C+S..QT.%26openedRefinements%3D*%26filter%3DAND%28NOT%284283010803%29%29%26searchField%3DSearch+All
dcterms:description
Research of multi-layer heterostructure systems utilizing electrically active organic compounds is highly topical issue essential for effective development of new generation of electronic devices. This paper presents the results of particular work in this field focused on rather experimental construction of metal-insulator-semiconductor heterojunctions based on Ta + Ta2O5 electrode system incorporating easily applicable solution processed organic semiconductor, allowing to adjust the interfacial energetic conditions in desired manner. As a result, a well defined rectifying MIS structure with the onset voltage of 1,5 V and the rectifying ratio of 6x104 has been obtained. Research of multi-layer heterostructure systems utilizing electrically active organic compounds is highly topical issue essential for effective development of new generation of electronic devices. This paper presents the results of particular work in this field focused on rather experimental construction of metal-insulator-semiconductor heterojunctions based on Ta + Ta2O5 electrode system incorporating easily applicable solution processed organic semiconductor, allowing to adjust the interfacial energetic conditions in desired manner. As a result, a well defined rectifying MIS structure with the onset voltage of 1,5 V and the rectifying ratio of 6x104 has been obtained.
dcterms:title
Planar heterostructures based on organic semiconductor Planar heterostructures based on organic semiconductor
skos:prefLabel
Planar heterostructures based on organic semiconductor Planar heterostructures based on organic semiconductor
skos:notation
RIV/49777513:23220/11:43925011!RIV15-MSM-23220___
n3:aktivita
n9:Z n9:S n9:P
n3:aktivity
P(ED2.1.00/03.0094), S, Z(MSM4977751310)
n3:dodaniDat
n10:2015
n3:domaciTvurceVysledku
n4:3864383 n4:2069199 n4:1409573 n4:9203176 n4:2203316
n3:druhVysledku
n21:D
n3:duvernostUdaju
n7:S
n3:entitaPredkladatele
n12:predkladatel
n3:idSjednocenehoVysledku
220469
n3:idVysledku
RIV/49777513:23220/11:43925011
n3:jazykVysledku
n24:eng
n3:klicovaSlova
Planar heterostructures, organic-metallic heterojunction, MIS, organic semiconductor.semiconductor.
n3:klicoveSlovo
n11:organic%20semiconductor.semiconductor. n11:organic-metallic%20heterojunction n11:MIS n11:Planar%20heterostructures
n3:kontrolniKodProRIV
[F8FFBFB7B215]
n3:mistoKonaniAkce
Tatranská Lomnica
n3:mistoVydani
Piscataway, NJ
n3:nazevZdroje
Proceedings of the International Spring Seminar on Electronics Technology
n3:obor
n14:JA
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
5
n3:projekt
n20:ED2.1.00%2F03.0094
n3:rokUplatneniVysledku
n10:2011
n3:tvurceVysledku
Hamáček, Aleš Hromadka, Karel Pretl, Silvan Řeboun, Jan Džugan, Tomáš
n3:typAkce
n8:WRD
n3:zahajeniAkce
2011-05-11+02:00
n3:zamer
n19:MSM4977751310
s:issn
2161-2528
s:numberOfPages
6
n6:doi
10.1109/ISSE.2011.6053553
n23:hasPublisher
Technická univerzita v Košiciach
n18:isbn
978-1-4577-2112-0
n22:organizacniJednotka
23220