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Statements

Subject Item
n2:RIV%2F49777513%3A23220%2F09%3A00501994%21RIV10-GA0-23220___
rdf:type
skos:Concept n16:Vysledek
dcterms:description
This paper presents research motivated by industrial demand for using power semiconductor devices based on SiC (Silicon Carbide). The paper deals with possibility of SiC devices application in traction vehicles. The main attention has been given to the topology of 3-phase voltage-source inverter with free- wheeling SiC schottky diode and 1-phase traction converter with middle frequency converter for auxiliary drives. The theoretical conclusions and simulation results are compared with experimental measurements on laboratory model with rated power of 2kVA This paper presents research motivated by industrial demand for using power semiconductor devices based on SiC (Silicon Carbide). The paper deals with possibility of SiC devices application in traction vehicles. The main attention has been given to the topology of 3-phase voltage-source inverter with free- wheeling SiC schottky diode and 1-phase traction converter with middle frequency converter for auxiliary drives. The theoretical conclusions and simulation results are compared with experimental measurements on laboratory model with rated power of 2kVA
dcterms:title
Application of the modern semiconductor devices based on the SiC Application of the modern semiconductor devices based on the SiC
skos:prefLabel
Application of the modern semiconductor devices based on the SiC Application of the modern semiconductor devices based on the SiC
skos:notation
RIV/49777513:23220/09:00501994!RIV10-GA0-23220___
n3:aktivita
n15:P
n3:aktivity
P(GA102/09/1164)
n3:dodaniDat
n10:2010
n3:domaciTvurceVysledku
n13:9273069 n13:5059887
n3:druhVysledku
n19:D
n3:duvernostUdaju
n9:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
303854
n3:idVysledku
RIV/49777513:23220/09:00501994
n3:jazykVysledku
n20:eng
n3:klicovaSlova
Silicon Carbide; Traction application; Power semiconductor device; Hybrid power integration
n3:klicoveSlovo
n4:Traction%20application n4:Power%20semiconductor%20device n4:Silicon%20Carbide n4:Hybrid%20power%20integration
n3:kontrolniKodProRIV
[CF115F79FBBC]
n3:mistoKonaniAkce
Barcelona
n3:mistoVydani
Brussel
n3:nazevZdroje
EPE 2009
n3:obor
n14:JA
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
2
n3:projekt
n12:GA102%2F09%2F1164
n3:rokUplatneniVysledku
n10:2009
n3:tvurceVysledku
Hruška, Miroslav Drábek, Pavel
n3:typAkce
n21:WRD
n3:zahajeniAkce
2009-09-10+02:00
s:numberOfPages
5
n11:hasPublisher
EPE Association
n5:isbn
978-90-75815-00-9
n8:organizacniJednotka
23220