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Statements

Subject Item
n2:RIV%2F49610040%3A_____%2F04%3A00000005%21RIV%2F2004%2FMZP%2FSOLAR4%2FN
rdf:type
n14:Vysledek skos:Concept
dcterms:description
A description of mixed phase hydrogenated microcrystalline silicon (micro c-Si:H) geometry by a Voronoi network based on the growth in the grain neighborhoods is used as a basis for modelling electronic transport in micro c-Si:H. The experimentally observed evolution of the grain shape during growth is used to discuss enhancement of the internal electric field at the grain tip. A possibility of light focussing by a spherical grain cap is suggested. Coincidence of the focussed photogeneration with the high electric field region could lead to solar cells with photogeneration of carriers spatially separated according to the photon energy. A description of mixed phase hydrogenated microcrystalline silicon (micro c-Si:H) geometry by a Voronoi network based on the growth in the grain neighborhoods is used as a basis for modelling electronic transport in micro c-Si:H. The experimentally observed evolution of the grain shape during growth is used to discuss enhancement of the internal electric field at the grain tip. A possibility of light focussing by a spherical grain cap is suggested. Coincidence of the focussed photogeneration with the high electric field region could lead to solar cells with photogeneration of carriers spatially separated according to the photon energy.
dcterms:title
Model of electronic transport in microcrzstalline silicon and its use for prediction of device performance Model of electronic transport in microcrzstalline silicon and its use for prediction of device performance
skos:prefLabel
Model of electronic transport in microcrzstalline silicon and its use for prediction of device performance Model of electronic transport in microcrzstalline silicon and its use for prediction of device performance
skos:notation
RIV/49610040:_____/04:00000005!RIV/2004/MZP/SOLAR4/N
n3:strany
303; 309
n3:aktivita
n9:P
n3:aktivity
P(GA202/03/0789), P(SM/300/1/03)
n3:cisloPeriodika
20040615
n3:dodaniDat
n8:2004
n3:domaciTvurceVysledku
n10:7483155 n10:8470847 n10:3750299
n3:druhVysledku
n13:J
n3:duvernostUdaju
n17:S
n3:entitaPredkladatele
n15:predkladatel
n3:idSjednocenehoVysledku
573904
n3:idVysledku
RIV/49610040:_____/04:00000005
n3:jazykVysledku
n12:eng
n3:klicovaSlova
thin film silicon solar cells; modelling of silicon growth; Voronoi network; internal light focussing;
n3:klicoveSlovo
n4:modelling%20of%20silicon%20growth n4:Voronoi%20network n4:thin%20film%20silicon%20solar%20cells n4:internal%20light%20focussing
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[DE227FCED25F]
n3:nazevZdroje
Journal of Non-Crystalline Solids
n3:obor
n16:BM
n3:pocetDomacichTvurcuVysledku
6
n3:pocetTvurcuVysledku
7
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:projekt
n6:GA202%2F03%2F0789 n6:SM%2F300%2F1%2F03
n3:rokUplatneniVysledku
n8:2004
n3:svazekPeriodika
Volumes 33
n3:tvurceVysledku
Mates, Tomáš Stuchlík, Jiří Fejfar, Antonín
s:issn
0022-3093
s:numberOfPages
7