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Statements

Subject Item
n2:RIV%2F44555601%3A13430%2F04%3A00002694%21RIV%2F2005%2FMSM%2F134305%2FN
rdf:type
n3:Vysledek skos:Concept
dcterms:description
Organosilicon plasma deposited polymers are of interest for different kinds of applications like packaging, passivation and dielectric layers. A large set of plasma processes is possible, among which are low-pressure plasma enhanced chemical vapour deposition (PECVD) and plasma assisted chemical vapour deposition (PACVD) often used. In this work, we studied the composition and surface morphology of the hexamethyldisiloxane (HMDSO) and tetramethyldisoloxane (TMDSO) layers produced by PECVD and PACVD deposition using three plasma generation processes (plasma reactors): RF inductively coupled plasma (RFICP), microwave distributed electron cyclotron resonance plasma (DECR) and microwave induced remote nitrogen afterlow (MIRA). The layers composition was investigated by Rutherford backscattering spectrometry (RBS) and by elastic recoil detection analysis (ERDA) and the layer surface morphology was determined by atomic force microscopy (AFM). Composition, density and morphology (roughness, porosity) of the Organosilicon plasma deposited polymers are of interest for different kinds of applications like packaging, passivation and dielectric layers. A large set of plasma processes is possible, among which are low-pressure plasma enhanced chemical vapour deposition (PECVD) and plasma assisted chemical vapour deposition (PACVD) often used. In this work, we studied the composition and surface morphology of the hexamethyldisiloxane (HMDSO) and tetramethyldisoloxane (TMDSO) layers produced by PECVD and PACVD deposition using three plasma generation processes (plasma reactors): RF inductively coupled plasma (RFICP), microwave distributed electron cyclotron resonance plasma (DECR) and microwave induced remote nitrogen afterlow (MIRA). The layers composition was investigated by Rutherford backscattering spectrometry (RBS) and by elastic recoil detection analysis (ERDA) and the layer surface morphology was determined by atomic force microscopy (AFM). Composition, density and morphology (roughness, porosity) of the Byla zkoumána role parametrů během depozice především teploty substrátu na růst křemíkových vrstev. Druhá část prezentovaných výsledků se týkala studia morfologie a složení vrstev připravených několika typy plasmatických reaktorů. Vrstvy byly studovány jadernými analytickými metodami RBS, ERDA a rovněž AFM. Morfologie, složení vrstev a jejich vlastnosti byly diskutovány ve spojitosti s použitím různých typů plasmatických reaktorů.
dcterms:title
The combined study of the organosilicon films by RBS, ERDA and AFM analytical methods obtained from PECVD and PACVD Komplexní studium vrstev připravených metodami PECVD a PACVD analytickými metodami RBS, ERDA a AFM. The combined study of the organosilicon films by RBS, ERDA and AFM analytical methods obtained from PECVD and PACVD
skos:prefLabel
The combined study of the organosilicon films by RBS, ERDA and AFM analytical methods obtained from PECVD and PACVD Komplexní studium vrstev připravených metodami PECVD a PACVD analytickými metodami RBS, ERDA a AFM. The combined study of the organosilicon films by RBS, ERDA and AFM analytical methods obtained from PECVD and PACVD
skos:notation
RIV/44555601:13430/04:00002694!RIV/2005/MSM/134305/N
n4:strany
1143-1146
n4:aktivita
n6:P
n4:aktivity
P(OC 527.50)
n4:cisloPeriodika
2
n4:dodaniDat
n10:2005
n4:domaciTvurceVysledku
n7:5985498 n7:7033222 n7:8822646 n7:5664233
n4:druhVysledku
n17:J
n4:duvernostUdaju
n16:S
n4:entitaPredkladatele
n15:predkladatel
n4:idSjednocenehoVysledku
558094
n4:idVysledku
RIV/44555601:13430/04:00002694
n4:jazykVysledku
n12:eng
n4:klicovaSlova
silicon;ion scattering spectroscopy;chemical vapour deposition;plasma processing
n4:klicoveSlovo
n14:plasma%20processing n14:ion%20scattering%20spectroscopy n14:silicon n14:chemical%20vapour%20deposition
n4:kodStatuVydavatele
NL - Nizozemsko
n4:kontrolniKodProRIV
[3C8D9FC93BB7]
n4:nazevZdroje
Surface Science
n4:obor
n5:BL
n4:pocetDomacichTvurcuVysledku
4
n4:pocetTvurcuVysledku
10
n4:projekt
n11:OC%20527.50
n4:rokUplatneniVysledku
n10:2004
n4:svazekPeriodika
566-568
n4:tvurceVysledku
Granier, A. Švec, Martin Peřina, Václav Macková, Anna Strýhal, Zdeněk Pavlík, Jaroslav Quede, A. Borvon, G. Raynaud, P. Supiot, P.
s:issn
0039-6028
s:numberOfPages
4
n18:organizacniJednotka
13430