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Statements

Subject Item
n2:RIV%2F26821532%3A_____%2F13%3A%230000057%21RIV13-MPO-26821532
rdf:type
n9:Vysledek skos:Concept
dcterms:description
Polished Silicon wafer with Advanced Epitaxial Layer (AEPI). Wafer diameter 200 mm. Localized Light Scatterers (LLS) 100% of Wafer - max. 30 Counts per wafer >0.30 um by laser scan, Localized Light Scatterers (LLS) 90% of Wafer - max. 20 Counts per wafer >0.30 um by laser scan, thickness variability max. 2%, resistivity variability max. 4%. Polished Silicon wafer with Advanced Epitaxial Layer (AEPI). Wafer diameter 200 mm. Localized Light Scatterers (LLS) 100% of Wafer - max. 30 Counts per wafer >0.30 um by laser scan, Localized Light Scatterers (LLS) 90% of Wafer - max. 20 Counts per wafer >0.30 um by laser scan, thickness variability max. 2%, resistivity variability max. 4%.
dcterms:title
Final Product Specification for 200 mm AEPI W814AXX Silicon Epitaxial Wafers Final Product Specification for 200 mm AEPI W814AXX Silicon Epitaxial Wafers
skos:prefLabel
Final Product Specification for 200 mm AEPI W814AXX Silicon Epitaxial Wafers Final Product Specification for 200 mm AEPI W814AXX Silicon Epitaxial Wafers
skos:notation
RIV/26821532:_____/13:#0000057!RIV13-MPO-26821532
n9:predkladatel
n10:ico%3A26821532
n3:aktivita
n11:P
n3:aktivity
P(FR-TI3/031)
n3:dodaniDat
n17:2013
n3:domaciTvurceVysledku
n4:8906793 n4:6724264
n3:druhVysledku
n12:G%2FB
n3:duvernostUdaju
n15:C
n3:ekonomickeParametry
Cana max. 100USD/200 mm AEPI desku
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
75019
n3:idVysledku
RIV/26821532:_____/13:#0000057
n3:interniIdentifikace
AEPIW814AXX
n3:jazykVysledku
n6:eng
n3:kategorie
n18:A
n3:klicovaSlova
Silicon wafer; Epitaxial layer; Epitaxial wafer; Thickness variability; Resistivity variability; Localized Light Scatterers
n3:klicoveSlovo
n5:Resistivity%20variability n5:Silicon%20wafer n5:Thickness%20variability n5:Localized%20Light%20Scatterers n5:Epitaxial%20layer n5:Epitaxial%20wafer
n3:kontrolniKodProRIV
[463A2E08F329]
n3:licencniPoplatek
n20:A
n3:obor
n16:JJ
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
2
n3:projekt
n19:FR-TI3%2F031
n3:rokUplatneniVysledku
n17:2013
n3:technickeParametry
200 mm AEPI, LLS 100% of wafer - max. 30 >0.30 um, LLS 90% of wafer - max. 20 >0.30 um, TTV AEPI max. 2%, RRV AEPI max. 4%.
n3:tvurceVysledku
Šik, Jan Kostelník, Petr
n3:vlastnik
n14:vlastnikVysledku
n3:vyuzitiJinymSubjektem
n8:A