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Statements

Subject Item
n2:RIV%2F26821532%3A_____%2F12%3A%230000041%21RIV13-MPO-26821532
rdf:type
n8:Vysledek skos:Concept
rdfs:seeAlso
http://www.intechopen.com/books/modern-aspects-of-bulk-crystal-and-thin-film-preparation/defect-engineering-during-czochralski-crystal-growth-and-silicon-wafer-manufacturing
dcterms:description
Electronic devices and integrated circuits are fabricated on single-crystal silicon wafers which are produced from silicon crystals grown primarily by the Czochralski (CZ) technique. Various defects are formed in the growing crystal as well as in the wafers during their processing. This chapter deals with the topic of engineering of crystal defects in the technology of manufacturing silicon single crystals and silicon wafers for the electronic industry. A basic overview of crystal defects found in semiconductor-grade silicon is provided and mechanisms of their formation are introduced. The impact of crystal defects on the manufacturing and performance of electronic devices is outlined and some of the methods of defect analyses are described. Finally, the most important methods for control of defect formation are summarized. Electronic devices and integrated circuits are fabricated on single-crystal silicon wafers which are produced from silicon crystals grown primarily by the Czochralski (CZ) technique. Various defects are formed in the growing crystal as well as in the wafers during their processing. This chapter deals with the topic of engineering of crystal defects in the technology of manufacturing silicon single crystals and silicon wafers for the electronic industry. A basic overview of crystal defects found in semiconductor-grade silicon is provided and mechanisms of their formation are introduced. The impact of crystal defects on the manufacturing and performance of electronic devices is outlined and some of the methods of defect analyses are described. Finally, the most important methods for control of defect formation are summarized.
dcterms:title
Defect engineering during Czochralski crystal growth and silicon wafer manufacturing Defect engineering during Czochralski crystal growth and silicon wafer manufacturing
skos:prefLabel
Defect engineering during Czochralski crystal growth and silicon wafer manufacturing Defect engineering during Czochralski crystal growth and silicon wafer manufacturing
skos:notation
RIV/26821532:_____/12:#0000041!RIV13-MPO-26821532
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n16:ico%3A26821532
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n9:S n9:P
n3:aktivity
P(FR-TI3/031), S
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n19:2013
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n10:6724264 n10:1388428
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n5:C
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n13:predkladatel
n3:idSjednocenehoVysledku
129829
n3:idVysledku
RIV/26821532:_____/12:#0000041
n3:jazykVysledku
n7:eng
n3:klicovaSlova
Silicon; Czochralski method; Crystal growth; Crystal defects; Silicon wafer; COP; MCZ
n3:klicoveSlovo
n6:MCZ n6:Silicon%20wafer n6:Crystal%20growth n6:Silicon n6:COP n6:Czochralski%20method n6:Crystal%20defects
n3:kontrolniKodProRIV
[1B53E7DCCE00]
n3:mistoVydani
Rijeka, Croatia
n3:nazevZdroje
Modern Aspects of Bulk Crystal and Thin Film Preparation
n3:obor
n4:JJ
n3:pocetDomacichTvurcuVysledku
2
n3:pocetStranKnihy
608
n3:pocetTvurcuVysledku
2
n3:projekt
n18:FR-TI3%2F031
n3:rokUplatneniVysledku
n19:2012
n3:tvurceVysledku
Šik, Jan Válek, Lukáš
s:numberOfPages
28
n14:doi
10.5772/29816
n20:hasPublisher
InTech
n22:isbn
978-953-307-610-2