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Statements

Subject Item
n2:RIV%2F26821532%3A_____%2F08%3A%230000003%21RIV08-MPO-26821532
rdf:type
n13:Vysledek skos:Concept
dcterms:description
Předmětem studia byl neobvyklý charakter Oxidation Induced Stacking Faults (OISF - oxidací vyvolané vrstevné chyby) v křemíku silně legovaném bórem. Místo běžně uváděného jednoduchého OISF ringu jsme pozoroval OISF ring s pásovou strukturou. Pásy odpovídají rozložení zbytkových vakancí (oronkov and Falster [J. Crystal Growth 204 (1999) 462]). Ukazujeme, že kyslíkové precipitáty v L a H pásu rostou v abnormálních velikostech a tvoří zárodky OISF během následující oxidace křemíkové desky. Dokázali jsme, že kombinace vysoké koncentrace bóru, kyslíku a vakancí vyvolává zvýšenou precipitaci kyslíku během růstu krystalů. An unusual pattern of the Oxidation Induced Stacking Faults (OISF) in the heavily boron-doped silicon is reported. Instead of the commonly reported simple OISF ring, we observe a banded OISF pattern. The pattern reflects the distribution of residual vacancies as it is described by Voronkov and Falster [J. Crystal Growth 204 (1999) 462]. We show that the oxygen precipitates in the L- and H- bands grow to an abnormally large size during the crystal growth and which serve as the OISF nuclei during subsequent wafer oxidation. It is concluded that a combination of the high boron, oxygen and vacancy concentration is responsible for the enhanced oxygen precipitation during the crystal growth. An unusual pattern of the Oxidation Induced Stacking Faults (OISF) in the heavily boron-doped silicon is reported. Instead of the commonly reported simple OISF ring, we observe a banded OISF pattern. The pattern reflects the distribution of residual vacancies as it is described by Voronkov and Falster [J. Crystal Growth 204 (1999) 462]. We show that the oxygen precipitates in the L- and H- bands grow to an abnormally large size during the crystal growth and which serve as the OISF nuclei during subsequent wafer oxidation. It is concluded that a combination of the high boron, oxygen and vacancy concentration is responsible for the enhanced oxygen precipitation during the crystal growth.
dcterms:title
Zvýšená precipitace kyslíku při Czochralskiho tažení krystalů Enhanced Oxygen Precipitation during the Czochralski Crystal Growth Enhanced Oxygen Precipitation during the Czochralski Crystal Growth
skos:prefLabel
Enhanced Oxygen Precipitation during the Czochralski Crystal Growth Zvýšená precipitace kyslíku při Czochralskiho tažení krystalů Enhanced Oxygen Precipitation during the Czochralski Crystal Growth
skos:notation
RIV/26821532:_____/08:#0000003!RIV08-MPO-26821532
n4:strany
167-173
n4:aktivita
n8:P
n4:aktivity
P(FI-IM2/131)
n4:cisloPeriodika
131-133
n4:dodaniDat
n10:2008
n4:domaciTvurceVysledku
n16:6724264 n16:1388428
n4:druhVysledku
n6:J
n4:duvernostUdaju
n17:S
n4:entitaPredkladatele
n9:predkladatel
n4:idSjednocenehoVysledku
366248
n4:idVysledku
RIV/26821532:_____/08:#0000003
n4:jazykVysledku
n14:eng
n4:klicovaSlova
Silicon, defects, boron, oxygen, precipitation
n4:klicoveSlovo
n12:oxygen n12:precipitation n12:defects n12:Silicon n12:boron
n4:kodStatuVydavatele
CH - Švýcarská konfederace
n4:kontrolniKodProRIV
[F506FC4F612E]
n4:nazevZdroje
Solid State Phenomena
n4:obor
n15:BM
n4:pocetDomacichTvurcuVysledku
3
n4:pocetTvurcuVysledku
3
n4:projekt
n5:FI-IM2%2F131
n4:rokUplatneniVysledku
n10:2008
n4:svazekPeriodika
2008
n4:tvurceVysledku
Válek, Lukáš Šik, Jan
s:issn
1012-0394
s:numberOfPages
7