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Statements

Subject Item
n2:RIV%2F26821532%3A_____%2F05%3A%230000002%21RIV08-MPO-26821532
rdf:type
skos:Concept n17:Vysledek
dcterms:description
Metoda MCC (Method of Controlled Contamination) byla vyvinuta v ON SEMICONDUCTOR CZECH REPUBLIC pro měření getračních schopností křemíkových desek. MCC je založena na řízené konatminaci křemíkové desky a následné visualizaci odpovídajících defektů. Změřili jsme getrační schopnosti Si desek a zjistili jsme řádově vyšší getrační schopnosti desek Si:B ve srovnání s deskami Si:As/Sb. Getrační kapacita desek Si:B po vysokoteplotním žíhání vzrostla, pro Si:As/Sb nebyly zjištěny měřitelné změny. Různé chování křemíkových desek odpovídá odlišnému obsahu kyslíku a precipitaci kyslíku v závislosti na teplotní historii krystalu. Legování N v každém případě podporovalo precipitaci kyslíku a zvýšilo tak getrační schopnosti desek Method of controlled contamination (MCC) was developed in ON SEMICONDUCTOR CZECH REPUBLIC for measurement of gettering efficiency of silicon wafers. This method is based on quantified contamination of wafer backside and after delineating of corresponding haze (the form of agglomerates of etch pits) on the front side. We noted better gettering of Si:B compared to Si:As/Sb. The gettering ability of Si:B increases after heat treatment against no changes of Si:As/Sb. This behaviour is fully related to different oxygen content and different precipitation in dependence of crystal thermal history. Doping by N initiated oxygen precipitation and significantly higher gettering ability was measured for all samples. Method of controlled contamination (MCC) was developed in ON SEMICONDUCTOR CZECH REPUBLIC for measurement of gettering efficiency of silicon wafers. This method is based on quantified contamination of wafer backside and after delineating of corresponding haze (the form of agglomerates of etch pits) on the front side. We noted better gettering of Si:B compared to Si:As/Sb. The gettering ability of Si:B increases after heat treatment against no changes of Si:As/Sb. This behaviour is fully related to different oxygen content and different precipitation in dependence of crystal thermal history. Doping by N initiated oxygen precipitation and significantly higher gettering ability was measured for all samples.
dcterms:title
Silicon Wafer Gettering Ability Studied by Method of Controlled Contamination Silicon Wafer Gettering Ability Studied by Method of Controlled Contamination Studium getrační schopnosti křemíkových desek metodou řízené kontaminace
skos:prefLabel
Silicon Wafer Gettering Ability Studied by Method of Controlled Contamination Silicon Wafer Gettering Ability Studied by Method of Controlled Contamination Studium getrační schopnosti křemíkových desek metodou řízené kontaminace
skos:notation
RIV/26821532:_____/05:#0000002!RIV08-MPO-26821532
n3:strany
42-43
n3:aktivita
n16:P
n3:aktivity
P(FI-IM2/131)
n3:dodaniDat
n6:2008
n3:domaciTvurceVysledku
n7:1388428 n7:1116029
n3:druhVysledku
n12:D
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n20:predkladatel
n3:idSjednocenehoVysledku
542605
n3:idVysledku
RIV/26821532:_____/05:#0000002
n3:jazykVysledku
n11:eng
n3:klicovaSlova
Silicon, gettering, crystal, contamination
n3:klicoveSlovo
n4:gettering n4:Silicon n4:contamination n4:crystal
n3:kontrolniKodProRIV
[E36EC14F7080]
n3:mistoKonaniAkce
Kežmarské Žľaby (SR)
n3:mistoVydani
Bratislava (SR)
n3:nazevZdroje
Development of Materials Science in Research and Education
n3:obor
n18:BM
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:projekt
n13:FI-IM2%2F131
n3:rokUplatneniVysledku
n6:2005
n3:tvurceVysledku
Lorenc, Michal Válek, Lukáš
n3:typAkce
n15:EUR
n3:zahajeniAkce
2005-09-05+02:00
s:numberOfPages
87
n14:hasPublisher
Czech and Slovak Association for Crystal Growth
n10:isbn
80-89088-42-2