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Statements

Subject Item

n2:RIV%2F00216305%3A26620%2F14%3APU111442%21RIV15-GA0-26620___

rdf:type

skos:Concept n15:Vysledek

dcterms:description

Nanostructured niobium oxide (NO) semiconductors are gaining increasing attention as electronic, optical, and electro-optic materials. However, the preparation of stable NO nanofilms with reproducible morphology and behavior remains a challenge. Here we show a rapid, well-controlled, and efficient way to synthesize NO films with self-organized columnlike nanostructured morphologies and advanced functional properties. The films are developed via the growth of a nanoporous anodic alumina layer, followed by the pore-directed anodization of the Nb underlayer. The columns may grow 30–150 nm wide, up to 900 nm long, with an aspect ratio of up to 20, being anchored to a thin continuous oxide layer that separates the columns from the substrate. The as-anodized films have a graded chemical composition changing from amorphous Nb2O5 mixed with Al2O3, Si-, and P-containing species in the surface region to NbO2 in the lower film layer. The post-anodization treatments result in the controlled formation of Nb2O5, Nanostructured niobium oxide (NO) semiconductors are gaining increasing attention as electronic, optical, and electro-optic materials. However, the preparation of stable NO nanofilms with reproducible morphology and behavior remains a challenge. Here we show a rapid, well-controlled, and efficient way to synthesize NO films with self-organized columnlike nanostructured morphologies and advanced functional properties. The films are developed via the growth of a nanoporous anodic alumina layer, followed by the pore-directed anodization of the Nb underlayer. The columns may grow 30–150 nm wide, up to 900 nm long, with an aspect ratio of up to 20, being anchored to a thin continuous oxide layer that separates the columns from the substrate. The as-anodized films have a graded chemical composition changing from amorphous Nb2O5 mixed with Al2O3, Si-, and P-containing species in the surface region to NbO2 in the lower film layer. The post-anodization treatments result in the controlled formation of Nb2O5,

dcterms:title

Formation structure properties of niobium oxide nanocolumn arrays via self organized anodization of sputter deposited aluminum on niobium layers Formation structure properties of niobium oxide nanocolumn arrays via self organized anodization of sputter deposited aluminum on niobium layers

skos:prefLabel

Formation structure properties of niobium oxide nanocolumn arrays via self organized anodization of sputter deposited aluminum on niobium layers Formation structure properties of niobium oxide nanocolumn arrays via self organized anodization of sputter deposited aluminum on niobium layers

skos:notation

RIV/00216305:26620/14:PU111442!RIV15-GA0-26620___

n3:aktivita

n9:P

n3:aktivity

P(GA14-29531S)

n3:cisloPeriodika

-

n3:dodaniDat

n16:2015

n3:domaciTvurceVysledku

Mozalev, Alexander

n3:druhVysledku

n5:J

n3:duvernostUdaju

n17:S

n3:entitaPredkladatele

n14:predkladatel

n3:idSjednocenehoVysledku

17280

n3:idVysledku

RIV/00216305:26620/14:PU111442

n3:jazykVysledku

n12:eng

n3:klicovaSlova

niobium oxide, anodization, semiconductor, analytical investigation, dielectric properties, gas sensors

n3:klicoveSlovo

n6:semiconductor n6:anodization n6:niobium%20oxide n6:dielectric%20properties n6:gas%20sensors n6:analytical%20investigation

n3:kodStatuVydavatele

GB - Spojené království Velké Británie a Severního Irska

n3:kontrolniKodProRIV

[5BFC14BD5EAF]

n3:nazevZdroje

JOURNAL OF MATERIALS CHEMISTRY

n3:obor

n7:CG

n3:pocetDomacichTvurcuVysledku

1

n3:pocetTvurcuVysledku

7

n3:projekt

n11:GA14-29531S

n3:rokUplatneniVysledku

n16:2014

n3:svazekPeriodika

2

n3:tvurceVysledku

Llobet, Eduard Gispert-Guirado, Francesc Bittencourt, Ca. Vazquez, Rosa Maria Habazaki, Hiroki Mozalev, Alexander Cossement, Damien

n3:wos

000337096300017

s:issn

0959-9428

s:numberOfPages

14

n18:doi

10.1039/c4tc00349g

n13:organizacniJednotka

26620