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Statements

Subject Item
n2:RIV%2F00216305%3A26620%2F13%3APU103574%21RIV14-MSM-26620___
rdf:type
skos:Concept n9:Vysledek
dcterms:description
We show the growth of high-quality epitaxial graphene on 6H-SiC with Raman signatures comparable to exfoliated flakes. We ascribe the remaining low-quality transport properties to the strong electron-phonon coupling to two low-energy phonon modes at 70 and 16 meV. The coupling of these modes is enhanced by the defects present in the SiC substrate and buffer layer. Measurements of the mobility versus carrier concentration show a square-root dependence, corroborating the importance of surface phonon scattering in the limited mobility of graphene on SiC. We show the growth of high-quality epitaxial graphene on 6H-SiC with Raman signatures comparable to exfoliated flakes. We ascribe the remaining low-quality transport properties to the strong electron-phonon coupling to two low-energy phonon modes at 70 and 16 meV. The coupling of these modes is enhanced by the defects present in the SiC substrate and buffer layer. Measurements of the mobility versus carrier concentration show a square-root dependence, corroborating the importance of surface phonon scattering in the limited mobility of graphene on SiC.
dcterms:title
Surface phonon scattering in epitaxial graphene on 6H-SiC Surface phonon scattering in epitaxial graphene on 6H-SiC
skos:prefLabel
Surface phonon scattering in epitaxial graphene on 6H-SiC Surface phonon scattering in epitaxial graphene on 6H-SiC
skos:notation
RIV/00216305:26620/13:PU103574!RIV14-MSM-26620___
n9:predkladatel
n10:orjk%3A26620
n3:aktivita
n6:P
n3:aktivity
P(ED1.1.00/02.0068)
n3:cisloPeriodika
19
n3:dodaniDat
n15:2014
n3:domaciTvurceVysledku
n13:3853306
n3:druhVysledku
n8:J
n3:duvernostUdaju
n12:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
109093
n3:idVysledku
RIV/00216305:26620/13:PU103574
n3:jazykVysledku
n4:eng
n3:klicovaSlova
Graphene, SiC, Phonon scattring
n3:klicoveSlovo
n18:SiC n18:Graphene n18:Phonon%20scattring
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[A68ED309DD1D]
n3:nazevZdroje
PHYSICAL REVIEW B
n3:obor
n19:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
3
n3:projekt
n11:ED1.1.00%2F02.0068
n3:rokUplatneniVysledku
n15:2013
n3:svazekPeriodika
87
n3:tvurceVysledku
Procházka, Pavel Giesbers, A.J.M Flipse, C.F.J.
s:issn
1098-0121
s:numberOfPages
5
n14:organizacniJednotka
26620