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Statements

Subject Item
n2:RIV%2F00216305%3A26620%2F13%3APU103336%21RIV14-MSM-26620___
rdf:type
n10:Vysledek skos:Concept
dcterms:description
Experimental studies of transport and noise characteristics of cadmium-zinc-telluride (CdZnTe) crystal with symmetric gold contacts and a guard ring electrode have been carried out. The current-voltage (IV) characteristics and the noise spectral density were measured at room temperature under the dark. The sample with disconnected guard ring electrode showed symmetric characteristics for both bias voltage polarities. The shape IV characteristics indicated the presence of carrier injection, leading to IV characteristics non-linearity. Semiconductor surface has been identified as the main noise and leakage current source. After connecting the guard ring electrode, the leakage currents were suppressed by 2 orders and the noise spectral density decreased by 5 orders. In case of connected guard ring electrode, the asymmetry of IV characteristics has been observed. The contact with worse rectifying properties had higher contribution of noise to the detector system. Increasing bias voltage causes steeper det Experimental studies of transport and noise characteristics of cadmium-zinc-telluride (CdZnTe) crystal with symmetric gold contacts and a guard ring electrode have been carried out. The current-voltage (IV) characteristics and the noise spectral density were measured at room temperature under the dark. The sample with disconnected guard ring electrode showed symmetric characteristics for both bias voltage polarities. The shape IV characteristics indicated the presence of carrier injection, leading to IV characteristics non-linearity. Semiconductor surface has been identified as the main noise and leakage current source. After connecting the guard ring electrode, the leakage currents were suppressed by 2 orders and the noise spectral density decreased by 5 orders. In case of connected guard ring electrode, the asymmetry of IV characteristics has been observed. The contact with worse rectifying properties had higher contribution of noise to the detector system. Increasing bias voltage causes steeper det Experimental studies of transport and noise characteristics of cadmium-zinc-telluride (CdZnTe) crystal with symmetric gold contacts and a guard ring electrode have been carried out. The current-voltage (IV) characteristics and the noise spectral density were measured at room temperature under the dark. The sample with disconnected guard ring electrode showed symmetric characteristics for both bias voltage polarities. The shape IV characteristics indicated the presence of carrier injection, leading to IV characteristics non-linearity. Semiconductor surface has been identified as the main noise and leakage current source. After connecting the guard ring electrode, the leakage currents were suppressed by 2 orders and the noise spectral density decreased by 5 orders. In case of connected guard ring electrode, the asymmetry of IV characteristics has been observed. The contact with worse rectifying properties had higher contribution of noise to the detector system. Increasing bias voltage causes steeper det
dcterms:title
Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors
skos:prefLabel
Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors
skos:notation
RIV/00216305:26620/13:PU103336!RIV14-MSM-26620___
n10:predkladatel
n11:orjk%3A26620
n3:aktivita
n14:S
n3:aktivity
S
n3:cisloPeriodika
03
n3:dodaniDat
n15:2014
n3:domaciTvurceVysledku
n12:3684539 n12:9770690 n12:9346910 n12:2967677 n12:2108585 Elhadidy, Hassan Ali Mohamed
n3:druhVysledku
n9:J
n3:duvernostUdaju
n16:S
n3:entitaPredkladatele
n5:predkladatel
n3:idSjednocenehoVysledku
66832
n3:idVysledku
RIV/00216305:26620/13:PU103336
n3:jazykVysledku
n17:cze
n3:klicovaSlova
cdte, surface conductivity, noise
n3:klicoveSlovo
n6:surface%20conductivity n6:cdte n6:noise
n3:kodStatuVydavatele
SE - Švédské království
n3:kontrolniKodProRIV
[21F04973865B]
n3:nazevZdroje
Physica Scripta
n3:obor
n18:BM
n3:pocetDomacichTvurcuVysledku
6
n3:pocetTvurcuVysledku
7
n3:rokUplatneniVysledku
n15:2013
n3:svazekPeriodika
85
n3:tvurceVysledku
Franc, Jan Šik, Ondřej Škarvada, Pavel Elhadidy, Hassan Ali Mohamed Grmela, Lubomír Šikula, Josef Vondra, Marek
s:issn
0031-8949
s:numberOfPages
5
n4:organizacniJednotka
26620