This HTML5 document contains 39 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n11http://localhost/temp/predkladatel/
n18http://linked.opendata.cz/resource/domain/vavai/projekt/
n9http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n15http://linked.opendata.cz/resource/domain/vavai/subjekt/
n10http://linked.opendata.cz/ontology/domain/vavai/
n4http://linked.opendata.cz/ontology/domain/vavai/riv/
skoshttp://www.w3.org/2004/02/skos/core#
n6http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216305%3A26310%2F12%3APU97234%21RIV12-MPO-26310___/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n8http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n17http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n16http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n13http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n14http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n12http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n5http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216305%3A26310%2F12%3APU97234%21RIV12-MPO-26310___
rdf:type
skos:Concept n10:Vysledek
dcterms:description
The knowledge of parameters influencing the charge carrier transport is a crucial requirement for the characterization of electrical properties of materials. In this paper the theory of charge transport and injection current for trap-free low conductivity material and insulator containing charge carrier traps is presented in fractals formalism The knowledge of parameters influencing the charge carrier transport is a crucial requirement for the characterization of electrical properties of materials. In this paper the theory of charge transport and injection current for trap-free low conductivity material and insulator containing charge carrier traps is presented in fractals formalism
dcterms:title
Charge carrier transport in semiconductors: a fractal approach Charge carrier transport in semiconductors: a fractal approach
skos:prefLabel
Charge carrier transport in semiconductors: a fractal approach Charge carrier transport in semiconductors: a fractal approach
skos:notation
RIV/00216305:26310/12:PU97234!RIV12-MPO-26310___
n10:predkladatel
n15:orjk%3A26310
n4:aktivita
n16:P
n4:aktivity
P(FR-TI1/144)
n4:dodaniDat
n5:2012
n4:domaciTvurceVysledku
n9:5801737 n9:8842205 n9:6615007
n4:druhVysledku
n14:O
n4:duvernostUdaju
n17:S
n4:entitaPredkladatele
n6:predkladatel
n4:idSjednocenehoVysledku
126899
n4:idVysledku
RIV/00216305:26310/12:PU97234
n4:jazykVysledku
n13:eng
n4:klicovaSlova
Charge carrier transport, Space charge limited currents, Charge injection, Field effect, Fractal theory, Dielectric spectroscopy
n4:klicoveSlovo
n8:Fractal%20theory n8:Space%20charge%20limited%20currents n8:Dielectric%20spectroscopy n8:Charge%20injection n8:Charge%20carrier%20transport n8:Field%20effect
n4:kontrolniKodProRIV
[1F954853A971]
n4:obor
n12:BM
n4:pocetDomacichTvurcuVysledku
3
n4:pocetTvurcuVysledku
3
n4:projekt
n18:FR-TI1%2F144
n4:rokUplatneniVysledku
n5:2012
n4:tvurceVysledku
Nešpůrek, Stanislav Weiter, Martin Zmeškal, Oldřich
n11:organizacniJednotka
26310