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Statements

Subject Item
n2:RIV%2F00216305%3A26310%2F03%3APU38239%21RIV%2F2004%2FMSM%2F263104%2FN
rdf:type
n9:Vysledek skos:Concept
dcterms:description
The spectroscopic studies have been focused on the basic characterization of the RF discharge conditions during the films deposition. In the discharge spectra many different species has been determined. To characterize the neutral gas temperature the small amount of nitrogen has been involved into the discharge. The dependencies of the temperature and the molecular excitations in the discharge have been initially studied on the total discharge power and gas composition. The correlation among the discharrge parameters and the final layer properties will be subject of the following studies. The spectroscopic studies have been focused on the basic characterization of the RF discharge conditions during the films deposition. In the discharge spectra many different species has been determined. To characterize the neutral gas temperature the small amount of nitrogen has been involved into the discharge. The dependencies of the temperature and the molecular excitations in the discharge have been initially studied on the total discharge power and gas composition. The correlation among the discharrge parameters and the final layer properties will be subject of the following studies.
dcterms:title
Spectroscopic Monitoring of Plasma Deposition of Silane and Siloxane Based Thin Films Spectroscopic Monitoring of Plasma Deposition of Silane and Siloxane Based Thin Films
skos:prefLabel
Spectroscopic Monitoring of Plasma Deposition of Silane and Siloxane Based Thin Films Spectroscopic Monitoring of Plasma Deposition of Silane and Siloxane Based Thin Films
skos:notation
RIV/00216305:26310/03:PU38239!RIV/2004/MSM/263104/N
n4:strany
401-405
n4:aktivita
n10:Z
n4:aktivity
Z(MSM 263100019)
n4:cisloPeriodika
5
n4:dodaniDat
n12:2004
n4:domaciTvurceVysledku
n5:2201976 n5:2036126 n5:2888165 n5:8402620 n5:8194041 n5:5127416 n5:6073387
n4:druhVysledku
n15:J
n4:duvernostUdaju
n7:S
n4:entitaPredkladatele
n18:predkladatel
n4:idSjednocenehoVysledku
628163
n4:idVysledku
RIV/00216305:26310/03:PU38239
n4:jazykVysledku
n17:eng
n4:klicovaSlova
Plasma deposition, organosilicone layers, optical emission spectroscopy
n4:klicoveSlovo
n11:organosilicone%20layers n11:optical%20emission%20spectroscopy n11:Plasma%20deposition
n4:kodStatuVydavatele
SK - Slovenská republika
n4:kontrolniKodProRIV
[974BA1EF69C5]
n4:nazevZdroje
Acta Physica Slovaca
n4:obor
n13:BL
n4:pocetDomacichTvurcuVysledku
7
n4:pocetTvurcuVysledku
7
n4:pocetUcastnikuAkce
0
n4:pocetZahranicnichUcastnikuAkce
0
n4:rokUplatneniVysledku
n12:2003
n4:svazekPeriodika
53
n4:tvurceVysledku
Vaněk, Jan Krčma, František Čech, Vladimír Rašková, Zuzana Přikryl, Radek Havelková, Iveta Šormová, Hana
n4:zamer
n14:MSM%20263100019
s:issn
0323-0465
s:numberOfPages
5
n16:organizacniJednotka
26310