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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F98%3APU37576%21RIV%2F2005%2FGA0%2F262205%2FN
rdf:type
n5:Vysledek skos:Concept
dcterms:description
The photoluminescence (PL) spectroscopy has for a long time been established as a very efficient, nondestructive technique for the evaluation of semiconductor materials and heterostructures. At room temperature, the band-gap-energy of ternary and quaternary epitaxial layers can be determined from the position of the PL peak, and the half-width of the PL curve is correlated with the free-carrier concentration. Both these parameters are important for the preparation of new epitaxial layers and structures for optoelectronic devices and applications. The comparison of PL obtained in the Near-field optical region and corresponding electroluminescent spectra in the Far-field from diodes based on investigated material helps to analyze the relative contributions - of the material luminescence (PL), and - the wave-guiding properties of the heterostructure, to the spectrum emitted from the diode edge. The photoluminescence (PL) spectroscopy has for a long time been established as a very efficient, nondestructive technique for the evaluation of semiconductor materials and heterostructures. At room temperature, the band-gap-energy of ternary and quaternary epitaxial layers can be determined from the position of the PL peak, and the half-width of the PL curve is correlated with the free-carrier concentration. Both these parameters are important for the preparation of new epitaxial layers and structures for optoelectronic devices and applications. The comparison of PL obtained in the Near-field optical region and corresponding electroluminescent spectra in the Far-field from diodes based on investigated material helps to analyze the relative contributions - of the material luminescence (PL), and - the wave-guiding properties of the heterostructure, to the spectrum emitted from the diode edge. Spektroskopická měření fotoluminiscence byla dlouhou dobu považována za velmi účinnou nedestruktivní techniku pro zjišťování vlastností polovodičových rozhraní.S nástupem optického rastrovacího tunelového mikroskopu je možné provádět tato měření v pokojové teplotě a normýlním tlaku. Článek přináší porovnání fotoluminiscenčních spekter v blízké a vzdálené optické oblasti a ukazuje na některé z předností měření v blízkém poli.
dcterms:title
Lokální spektroskopie pomocí optického rastrovacího mikroskopu v blízkém poli Local spectroscopy by scanning near-field optical microscopy Local spectroscopy by scanning near-field optical microscopy
skos:prefLabel
Local spectroscopy by scanning near-field optical microscopy Lokální spektroskopie pomocí optického rastrovacího mikroskopu v blízkém poli Local spectroscopy by scanning near-field optical microscopy
skos:notation
RIV/00216305:26220/98:PU37576!RIV/2005/GA0/262205/N
n4:strany
215-218
n4:aktivita
n18:P
n4:aktivity
P(GV101/97/K009)
n4:cisloPeriodika
3
n4:dodaniDat
n10:2005
n4:domaciTvurceVysledku
n6:2762854 n6:2108585 n6:7088299 n6:6001041 n6:6493645
n4:druhVysledku
n16:J
n4:duvernostUdaju
n7:S
n4:entitaPredkladatele
n15:predkladatel
n4:idSjednocenehoVysledku
772936
n4:idVysledku
RIV/00216305:26220/98:PU37576
n4:jazykVysledku
n14:eng
n4:klicovaSlova
photoluminescence, local characteristics, SNOM,
n4:klicoveSlovo
n9:photoluminescence n9:local%20characteristics n9:SNOM
n4:kodStatuVydavatele
CZ - Česká republika
n4:kontrolniKodProRIV
[9F09BBB65A5E]
n4:nazevZdroje
Inženýrská mechanika
n4:obor
n12:BH
n4:pocetDomacichTvurcuVysledku
5
n4:pocetTvurcuVysledku
5
n4:projekt
n17:GV101%2F97%2FK009
n4:rokUplatneniVysledku
n10:1998
n4:svazekPeriodika
5
n4:tvurceVysledku
Brüstlová, Jitka Létal, Petr Grmela, Lubomír Dobis, Pavel Tománek, Pavel
s:issn
1210-2717
s:numberOfPages
4
n13:organizacniJednotka
26220