This HTML5 document contains 50 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n15http://localhost/temp/predkladatel/
n16http://linked.opendata.cz/resource/domain/vavai/projekt/
n7http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n12http://linked.opendata.cz/ontology/domain/vavai/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n19http://bibframe.org/vocab/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n14http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216305%3A26220%2F14%3APU111398%21RIV15-MSM-26220___/
n4http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n17http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n13http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n8http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n11http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n10http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n18http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F14%3APU111398%21RIV15-MSM-26220___
rdf:type
n12:Vysledek skos:Concept
dcterms:description
The paper describes the process of sapphire and silicon carbide substrates preparation by dry plasma etching and its characterization. The study confirms the possibility of using dry plasma etching processes for wide band gape materials treatment, since the condition of the substrate surface is an important parameter for electronic and optoelectronic devices manufacturing. Processed substrates were studied by interferometry to define the etch depth, and by atomic force microscopy to study the topography and statistical analysis of surface roughness before and after etching. The interferometry reveals the dependence of etch rate on the angle between the substrates and defocused beam of argon ions. It is also shown in low scale image that the surface damage occurs after the substrate treatment. But the common large area surface topography indicates the decreasing of roughness. In order to have purely physical etching the argon plasma was used. Thus this combination of methods allows determine optimal co The paper describes the process of sapphire and silicon carbide substrates preparation by dry plasma etching and its characterization. The study confirms the possibility of using dry plasma etching processes for wide band gape materials treatment, since the condition of the substrate surface is an important parameter for electronic and optoelectronic devices manufacturing. Processed substrates were studied by interferometry to define the etch depth, and by atomic force microscopy to study the topography and statistical analysis of surface roughness before and after etching. The interferometry reveals the dependence of etch rate on the angle between the substrates and defocused beam of argon ions. It is also shown in low scale image that the surface damage occurs after the substrate treatment. But the common large area surface topography indicates the decreasing of roughness. In order to have purely physical etching the argon plasma was used. Thus this combination of methods allows determine optimal co
dcterms:title
Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching
skos:prefLabel
Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching Interferometry and Atomic force microscopy of substrates for optoelectronics proceeded by dry plasma etching
skos:notation
RIV/00216305:26220/14:PU111398!RIV15-MSM-26220___
n3:aktivita
n13:S n13:P
n3:aktivity
P(ED1.1.00/02.0068), P(ED2.1.00/03.0072), S
n3:cisloPeriodika
1
n3:dodaniDat
n18:2015
n3:domaciTvurceVysledku
n7:6493645 Dallaeva, Dinara n7:2108585 Prokopyeva, Elena
n3:druhVysledku
n11:J
n3:duvernostUdaju
n17:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
22396
n3:idVysledku
RIV/00216305:26220/14:PU111398
n3:jazykVysledku
n8:eng
n3:klicovaSlova
etching, sapphire, silicon carbide, substrate, interferometry, atomic force microscopy
n3:klicoveSlovo
n4:interferometry n4:substrate n4:atomic%20force%20microscopy n4:sapphire n4:etching n4:silicon%20carbide
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[ACD0326D7E62]
n3:nazevZdroje
Proceedings. The Computer Security Foundations Workshop III
n3:obor
n10:JA
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
5
n3:projekt
n16:ED2.1.00%2F03.0072 n16:ED1.1.00%2F02.0068
n3:rokUplatneniVysledku
n18:2014
n3:svazekPeriodika
2014
n3:tvurceVysledku
Prokopyeva, Elena Tománek, Pavel Ramazanov, Shihgasan Grmela, Lubomír Dallaeva, Dinara
s:issn
1063-6900
s:numberOfPages
5
n19:doi
10.1109/ISOT.2014.76
n15:organizacniJednotka
26220