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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F13%3APU106798%21RIV14-MSM-26220___
rdf:type
skos:Concept n8:Vysledek
dcterms:description
Low frequency noise characteristics of GaN/AlGaN HFET structures were measured in wide temperature range and activation energy of traps were determined by several methods. Low frequency noise characteristics of GaN/AlGaN HFET structures were measured in wide temperature range and activation energy of traps were determined by several methods.
dcterms:title
Activation energy of traps in GaN HFETs Activation energy of traps in GaN HFETs
skos:prefLabel
Activation energy of traps in GaN HFETs Activation energy of traps in GaN HFETs
skos:notation
RIV/00216305:26220/13:PU106798!RIV14-MSM-26220___
n8:predkladatel
n9:orjk%3A26220
n3:aktivita
n17:S
n3:aktivity
S
n3:dodaniDat
n10:2014
n3:domaciTvurceVysledku
n19:7526938 n19:9770690
n3:druhVysledku
n15:D
n3:duvernostUdaju
n20:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
59387
n3:idVysledku
RIV/00216305:26220/13:PU106798
n3:jazykVysledku
n16:eng
n3:klicovaSlova
trap, GaN, HFET, activation energy, RTS noise
n3:klicoveSlovo
n13:RTS%20noise n13:trap n13:HFET n13:activation%20energy n13:GaN
n3:kontrolniKodProRIV
[89D69FF06BF7]
n3:mistoKonaniAkce
Montpellier, France
n3:mistoVydani
Montpellier
n3:nazevZdroje
Proceedings of 22nd International Conference on Noise and Fluctuations ICNF 2013, IEEE Catalog Number: CFP1392N-POD
n3:obor
n7:JA
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
4
n3:rokUplatneniVysledku
n10:2013
n3:tvurceVysledku
Šikula, Josef Pavelka, Jan Tacano, Munecazu Tanuma, Nobuhisa
n3:typAkce
n21:WRD
n3:zahajeniAkce
2013-06-24+02:00
s:numberOfPages
4
n5:hasPublisher
IEEE
n12:isbn
978-1-4799-0668-0
n11:organizacniJednotka
26220