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Statements

Subject Item

n2:RIV%2F00216305%3A26220%2F13%3APU106162%21RIV14-MSM-26220___

rdf:type

n7:Vysledek skos:Concept

dcterms:description

RTS noise in Si/SiO2, InGaAs/InAlAs and GaN/AlGaN structures was analysed and several important trap parameters, such as cross-section, activation energy and position in the channel could be estimated. RTS noise in Si/SiO2, InGaAs/InAlAs and GaN/AlGaN structures was analysed and several important trap parameters, such as cross-section, activation energy and position in the channel could be estimated.

dcterms:title

Noise sources in interface between mono-crystalline and amorphous semiconductors Noise sources in interface between mono-crystalline and amorphous semiconductors

skos:prefLabel

Noise sources in interface between mono-crystalline and amorphous semiconductors Noise sources in interface between mono-crystalline and amorphous semiconductors

skos:notation

RIV/00216305:26220/13:PU106162!RIV14-MSM-26220___

n7:predkladatel

n8:orjk%3A26220

n3:aktivita

n13:S

n3:aktivity

S

n3:dodaniDat

n17:2014

n3:domaciTvurceVysledku

n9:6209947 Dallaeva, Dinara n9:2108585 n9:7526938 n9:9770690

n3:druhVysledku

n4:D

n3:duvernostUdaju

n15:S

n3:entitaPredkladatele

n12:predkladatel

n3:idSjednocenehoVysledku

91889

n3:idVysledku

RIV/00216305:26220/13:PU106162

n3:jazykVysledku

n6:eng

n3:klicovaSlova

RTS noise, trap, GaN, InGaAs

n3:klicoveSlovo

n11:InGaAs n11:RTS%20noise n11:trap n11:GaN

n3:kontrolniKodProRIV

[39B5E4C9F353]

n3:mistoKonaniAkce

Snolenice

n3:mistoVydani

Bratislava

n3:nazevZdroje

Proceedings of 8th solid state surfaces and interfaces

n3:obor

n10:JA

n3:pocetDomacichTvurcuVysledku

5

n3:pocetTvurcuVysledku

6

n3:rokUplatneniVysledku

n17:2013

n3:tvurceVysledku

Dallaeva, Dinara Pavelka, Jan Chvátal, Miloš Tacano, Munecazu Šikula, Josef Grmela, Lubomír

n3:typAkce

n21:WRD

n3:zahajeniAkce

2013-11-18+01:00

s:numberOfPages

2

n20:hasPublisher

Univerzita Komenského v Bratislave

n16:isbn

978-80-223-3501-0

n18:organizacniJednotka

26220