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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F13%3APU106136%21RIV14-GA0-26220___
rdf:type
n5:Vysledek skos:Concept
dcterms:description
Aluminum nitride (AlN) is a direct wide band gap semiconductor which attracts much attention due to wide range of application and its unique properties. AlN thin films were obtained by magnetron sputtering of aluminum target. The quality of AlN surface topography plays important role in various optoelectronic devices. To understand how the effect of temperature changes the epilayers surface, the surface topography is characterized through atomic force microscopy (AFM) and fractal analysis. Aluminum nitride (AlN) is a direct wide band gap semiconductor which attracts much attention due to wide range of application and its unique properties. AlN thin films were obtained by magnetron sputtering of aluminum target. The quality of AlN surface topography plays important role in various optoelectronic devices. To understand how the effect of temperature changes the epilayers surface, the surface topography is characterized through atomic force microscopy (AFM) and fractal analysis.
dcterms:title
AFM imaging and fractaí analysis of surface roughness of AlN epilayers deposited on saphire substrate AFM imaging and fractaí analysis of surface roughness of AlN epilayers deposited on saphire substrate
skos:prefLabel
AFM imaging and fractaí analysis of surface roughness of AlN epilayers deposited on saphire substrate AFM imaging and fractaí analysis of surface roughness of AlN epilayers deposited on saphire substrate
skos:notation
RIV/00216305:26220/13:PU106136!RIV14-GA0-26220___
n5:predkladatel
n6:orjk%3A26220
n3:aktivita
n13:P
n3:aktivity
P(ED2.1.00/03.0072), P(GAP102/11/0995)
n3:dodaniDat
n9:2014
n3:domaciTvurceVysledku
n12:2108585 Dallaeva, Dinara n12:2967677
n3:druhVysledku
n16:D
n3:duvernostUdaju
n4:S
n3:entitaPredkladatele
n22:predkladatel
n3:idSjednocenehoVysledku
59695
n3:idVysledku
RIV/00216305:26220/13:PU106136
n3:jazykVysledku
n15:eng
n3:klicovaSlova
AlN epilayer, saphire, roughness, AFM, fractal analysis, measurement
n3:klicoveSlovo
n7:AFM n7:saphire n7:measurement n7:fractal%20analysis n7:roughness n7:AlN%20epilayer
n3:kontrolniKodProRIV
[CF3796B0830C]
n3:mistoKonaniAkce
Snolenice
n3:mistoVydani
Bratislava
n3:nazevZdroje
Proceedings of 8th Solid State Surfaces and Interfaces
n3:obor
n11:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
7
n3:projekt
n19:ED2.1.00%2F03.0072 n19:GAP102%2F11%2F0995
n3:rokUplatneniVysledku
n9:2013
n3:tvurceVysledku
Škarvada, Pavel Tománek, Pavel Dallaeva, Dinara Talu, Stefan Talu, Mihai Stach, Sebastian Grmela, Lubomír
n3:typAkce
n17:WRD
n3:zahajeniAkce
2013-11-18+01:00
s:numberOfPages
2
n8:hasPublisher
Univerzita Komenského v Bratislave
n21:isbn
978-80-223-3501-0
n20:organizacniJednotka
26220