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Namespace Prefixes

PrefixIRI
n19http://linked.opendata.cz/ontology/domain/vavai/riv/typAkce/
dctermshttp://purl.org/dc/terms/
n21http://localhost/temp/predkladatel/
n7http://purl.org/net/nknouf/ns/bibtex#
n12http://linked.opendata.cz/resource/domain/vavai/projekt/
n8http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n13http://linked.opendata.cz/resource/domain/vavai/subjekt/
n10http://linked.opendata.cz/ontology/domain/vavai/
n3https://schema.org/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n4http://linked.opendata.cz/ontology/domain/vavai/riv/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n5http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n18http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n22http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n20http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n17http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n9http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n15http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216305%3A26220%2F13%3APU106135%21RIV14-GA0-26220___/
n14http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F13%3APU106135%21RIV14-GA0-26220___
rdf:type
n10:Vysledek skos:Concept
dcterms:description
Parameters of silicon semiconductor devices are affected by the presence of defects. For the improvement of parameters and lifetime of the devices, the defect localization and characterization is important. This paper describes defects in large semiconductor devices, i.e. in crystalline silicon solar cell structure. The majority of defects has been investigated and localized using visible light emission under reversed bias measurements on microscale. Defects having impact on the sample current-voltage plot and reversed bias light emission characteristics are shown together with the micrographs of defective surface areas. Particular defects such as nonlinearity and local breakdown in current voltage plot were found in the solar cell structure. The most of the defects is associated with the surface inhomogenity but not all surface inhomogenities act as defects. Measurement at various temperatures allows identify the breakdown mechanism of the investigated defects. Parameters of silicon semiconductor devices are affected by the presence of defects. For the improvement of parameters and lifetime of the devices, the defect localization and characterization is important. This paper describes defects in large semiconductor devices, i.e. in crystalline silicon solar cell structure. The majority of defects has been investigated and localized using visible light emission under reversed bias measurements on microscale. Defects having impact on the sample current-voltage plot and reversed bias light emission characteristics are shown together with the micrographs of defective surface areas. Particular defects such as nonlinearity and local breakdown in current voltage plot were found in the solar cell structure. The most of the defects is associated with the surface inhomogenity but not all surface inhomogenities act as defects. Measurement at various temperatures allows identify the breakdown mechanism of the investigated defects.
dcterms:title
Microstructure defects in silicon solar cells Microstructure defects in silicon solar cells
skos:prefLabel
Microstructure defects in silicon solar cells Microstructure defects in silicon solar cells
skos:notation
RIV/00216305:26220/13:PU106135!RIV14-GA0-26220___
n10:predkladatel
n13:orjk%3A26220
n4:aktivita
n20:P
n4:aktivity
P(ED1.1.00/02.0068), P(GAP102/11/0995), P(LH11060)
n4:dodaniDat
n14:2014
n4:domaciTvurceVysledku
n8:2108585 n8:6493645 n8:4931637 n8:3502465 n8:3684539 Dallaeva, Dinara n8:3673332 n8:2967677
n4:druhVysledku
n9:D
n4:duvernostUdaju
n18:S
n4:entitaPredkladatele
n15:predkladatel
n4:idSjednocenehoVysledku
88247
n4:idVysledku
RIV/00216305:26220/13:PU106135
n4:jazykVysledku
n22:eng
n4:klicovaSlova
solar cell, silicon, defect, inhomogeneity, breakdown, microsctructure, measurement
n4:klicoveSlovo
n5:silicon n5:breakdown n5:solar%20cell n5:inhomogeneity n5:microsctructure n5:defect n5:measurement
n4:kontrolniKodProRIV
[B9C7D0E7025E]
n4:mistoKonaniAkce
Snolenice
n4:mistoVydani
Bratislava
n4:nazevZdroje
Proceedings of 8th Solid state surfaces and intefaces
n4:obor
n17:BM
n4:pocetDomacichTvurcuVysledku
8
n4:pocetTvurcuVysledku
9
n4:projekt
n12:GAP102%2F11%2F0995 n12:ED1.1.00%2F02.0068 n12:LH11060
n4:rokUplatneniVysledku
n14:2013
n4:tvurceVysledku
Tománek, Pavel Dallaeva, Dinara Macků, Robert Grmela, Lubomír Koktavý, Pavel Šicner, Jiří Smith, Steve J. Škarvada, Pavel Vondra, Marek
n4:typAkce
n19:WRD
n4:zahajeniAkce
2013-11-18+01:00
s:numberOfPages
2
n7:hasPublisher
Univerzita Komenského v Bratislave
n3:isbn
978-80-223-3501-0
n21:organizacniJednotka
26220