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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F13%3APU106025%21RIV14-GA0-26220___
rdf:type
n6:Vysledek skos:Concept
dcterms:description
Aluminum nitrides layers prepared on sapphire substrates are examined. The substrate surface was treated by dry plasma etching. The morphology of aluminum nitride thin films was studied by atomic force microscopy. Lateral force atomic force microscopy was used to study the morphology heterogeneity. The dependence of films morphology on the formation conditions has been defined. The objective of the study contributes to the improvement of technological process of dry etching and film deposition. Aluminum nitrides layers prepared on sapphire substrates are examined. The substrate surface was treated by dry plasma etching. The morphology of aluminum nitride thin films was studied by atomic force microscopy. Lateral force atomic force microscopy was used to study the morphology heterogeneity. The dependence of films morphology on the formation conditions has been defined. The objective of the study contributes to the improvement of technological process of dry etching and film deposition.
dcterms:title
Substrate Preparation for Manufacturing of Aluminum Nitride Layers Substrate Preparation for Manufacturing of Aluminum Nitride Layers
skos:prefLabel
Substrate Preparation for Manufacturing of Aluminum Nitride Layers Substrate Preparation for Manufacturing of Aluminum Nitride Layers
skos:notation
RIV/00216305:26220/13:PU106025!RIV14-GA0-26220___
n6:predkladatel
n7:orjk%3A26220
n3:aktivita
n12:P
n3:aktivity
P(ED2.1.00/03.0072), P(GAP102/11/0995)
n3:cisloPeriodika
5
n3:dodaniDat
n18:2014
n3:domaciTvurceVysledku
n17:6493645 Dallaeva, Dinara
n3:druhVysledku
n16:J
n3:duvernostUdaju
n5:S
n3:entitaPredkladatele
n10:predkladatel
n3:idSjednocenehoVysledku
108913
n3:idVysledku
RIV/00216305:26220/13:PU106025
n3:jazykVysledku
n15:eng
n3:klicovaSlova
aluminum oxide, aluminum nitride, dry etching
n3:klicoveSlovo
n4:aluminum%20oxide n4:dry%20etching n4:aluminum%20nitride
n3:kodStatuVydavatele
CZ - Česká republika
n3:kontrolniKodProRIV
[1CC03E4080C5]
n3:nazevZdroje
ElectroScope - http://www.electroscope.zcu.cz
n3:obor
n13:JA
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
2
n3:projekt
n11:GAP102%2F11%2F0995 n11:ED2.1.00%2F03.0072
n3:rokUplatneniVysledku
n18:2013
n3:svazekPeriodika
2013
n3:tvurceVysledku
Dallaeva, Dinara Tománek, Pavel
s:issn
1802-4564
s:numberOfPages
5
n19:organizacniJednotka
26220