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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F13%3APU104397%21RIV14-MPO-26220___
rdf:type
n11:Vysledek skos:Concept
rdfs:seeAlso
http://dx.doi.org/10.1142/S0218126613500734
dcterms:description
This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-floating-gate technique (BD-QFG). This technique leads to significant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of +-300 mV and low power consumption of 18 uW. The transconductance value of the transconductor is tunable by external resistor with wide linear range. To prove the validation of the new described technique a second order Gm-C multifunction filter is presented as one of possible application. The simulation results using 0.18 um CMOS N-Well process from TSMC show the attractive features of the proposed circuit. This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-floating-gate technique (BD-QFG). This technique leads to significant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of +-300 mV and low power consumption of 18 uW. The transconductance value of the transconductor is tunable by external resistor with wide linear range. To prove the validation of the new described technique a second order Gm-C multifunction filter is presented as one of possible application. The simulation results using 0.18 um CMOS N-Well process from TSMC show the attractive features of the proposed circuit.
dcterms:title
Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique
skos:prefLabel
Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique
skos:notation
RIV/00216305:26220/13:PU104397!RIV14-MPO-26220___
n11:predkladatel
n19:orjk%3A26220
n3:aktivita
n16:P
n3:aktivity
P(ED2.1.00/03.0072), P(FR-TI3/485), P(GAP102/11/1379)
n3:cisloPeriodika
8, IF: 0.2
n3:dodaniDat
n10:2014
n3:domaciTvurceVysledku
n4:3866300 n4:3071138 Khatib, Nabhan
n3:druhVysledku
n18:J
n3:duvernostUdaju
n20:S
n3:entitaPredkladatele
n21:predkladatel
n3:idSjednocenehoVysledku
112461
n3:idVysledku
RIV/00216305:26220/13:PU104397
n3:jazykVysledku
n12:eng
n3:klicovaSlova
Floating-gate MOST, quasi-floating-gate MOST, bulk-driven MOST, transconductor.
n3:klicoveSlovo
n9:quasi-floating-gate%20MOST n9:Floating-gate%20MOST n9:bulk-driven%20MOST n9:transconductor.
n3:kodStatuVydavatele
SG - Singapurská republika
n3:kontrolniKodProRIV
[D9D34B091AB8]
n3:nazevZdroje
JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS
n3:obor
n17:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
5
n3:projekt
n8:GAP102%2F11%2F1379 n8:FR-TI3%2F485 n8:ED2.1.00%2F03.0072
n3:rokUplatneniVysledku
n10:2013
n3:svazekPeriodika
2013 (22)
n3:tvurceVysledku
Prommee, Pipat Khateb, Fabian Khatib, Nabhan Fujcik, Lukáš Jaikla, Winai
n3:wos
000324836400011
s:issn
0218-1266
s:numberOfPages
13
n13:doi
10.1142/S0218126613500734
n14:organizacniJednotka
26220