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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F13%3APU104104%21RIV14-GA0-26220___
rdf:type
skos:Concept n11:Vysledek
rdfs:seeAlso
http://www.degruyter.com/view/j/aeei.2013.13.issue-1/aeei-2013-0004/aeei-2013-0004.xml?format=INT
dcterms:description
We have performed noise spectroscopy and charge transport properties analysis of CdTe detectors. Two types of high volume detectors are compared: Low ohmic (based on low resistivity crystal material 70 Ohm cm) and semi-insulating ( 10^8 Ohmcm).The theoretical fundaments of contacts role in detector system are given. We observed high asymmetry of IV characteristics of the lowohmic sample between normal and reverse bias, showing improper quality of contacts preparation, caused by higher concentration of impurities in metal-semiconductor area. This finding is supported by the fact that the low frequency noise spectral density is proportional to applied voltage with exponent 2.7, which is higher than the theoretical value 2.The semi-insulating sample very good contact rectification effect symmetry and less additive noise to the detector system. We have performed noise spectroscopy and charge transport properties analysis of CdTe detectors. Two types of high volume detectors are compared: Low ohmic (based on low resistivity crystal material 70 Ohm cm) and semi-insulating ( 10^8 Ohmcm).The theoretical fundaments of contacts role in detector system are given. We observed high asymmetry of IV characteristics of the lowohmic sample between normal and reverse bias, showing improper quality of contacts preparation, caused by higher concentration of impurities in metal-semiconductor area. This finding is supported by the fact that the low frequency noise spectral density is proportional to applied voltage with exponent 2.7, which is higher than the theoretical value 2.The semi-insulating sample very good contact rectification effect symmetry and less additive noise to the detector system.
dcterms:title
Metal-Semiconductor Junction Role in CdTe Detectors Metal-Semiconductor Junction Role in CdTe Detectors
skos:prefLabel
Metal-Semiconductor Junction Role in CdTe Detectors Metal-Semiconductor Junction Role in CdTe Detectors
skos:notation
RIV/00216305:26220/13:PU104104!RIV14-GA0-26220___
n11:predkladatel
n19:orjk%3A26220
n3:aktivita
n12:P
n3:aktivity
P(GAP102/11/0995)
n3:cisloPeriodika
1
n3:dodaniDat
n16:2014
n3:domaciTvurceVysledku
n20:2108585 n20:9346910
n3:druhVysledku
n4:J
n3:duvernostUdaju
n14:S
n3:entitaPredkladatele
n13:predkladatel
n3:idSjednocenehoVysledku
87503
n3:idVysledku
RIV/00216305:26220/13:PU104104
n3:jazykVysledku
n5:eng
n3:klicovaSlova
CdTe, transport characteristics, noise, contact quality
n3:klicoveSlovo
n7:transport%20characteristics n7:contact%20quality n7:noise n7:CdTe
n3:kodStatuVydavatele
PL - Polská republika
n3:kontrolniKodProRIV
[BC615DC57F9D]
n3:nazevZdroje
ACTA PHYSICA POLONICA A
n3:obor
n8:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
2
n3:projekt
n15:GAP102%2F11%2F0995
n3:rokUplatneniVysledku
n16:2013
n3:svazekPeriodika
13
n3:tvurceVysledku
Grmela, Lubomír Šik, Ondřej
n3:wos
000318549000098
s:issn
0587-4246
s:numberOfPages
4
n17:doi
10.2478/aeei-2013-0004
n6:organizacniJednotka
26220