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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F13%3APU101067%21RIV15-MSM-26220___
rdf:type
skos:Concept n16:Vysledek
dcterms:description
A process for ion-plasmaformation of aluminumnitride (AlN) nanolayers on nitrided sapphire (Al2O3) substrates is presented. The method is based on the direct current magnetron sputtering of a high-purity aluminumtarget in the presence of an argon–nitrogen gas mix and high frequency-activated nitrogen plasma. The method, combined with ion etching, producedmatched layers by nitration of Al2O3 in the (0001) plane, and formation of high quality AlN epilayers on this surface was observed. The processing characteristics and morphology dependence on synthesis parameters were studied using atomic force microscopy. A process for ion-plasmaformation of aluminumnitride (AlN) nanolayers on nitrided sapphire (Al2O3) substrates is presented. The method is based on the direct current magnetron sputtering of a high-purity aluminumtarget in the presence of an argon–nitrogen gas mix and high frequency-activated nitrogen plasma. The method, combined with ion etching, producedmatched layers by nitration of Al2O3 in the (0001) plane, and formation of high quality AlN epilayers on this surface was observed. The processing characteristics and morphology dependence on synthesis parameters were studied using atomic force microscopy.
dcterms:title
Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma
skos:prefLabel
Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma
skos:notation
RIV/00216305:26220/13:PU101067!RIV15-MSM-26220___
n3:aktivita
n15:S n15:P
n3:aktivity
P(ED1.1.00/02.0068), P(ED2.1.00/03.0072), P(GAP102/11/0995), S
n3:cisloPeriodika
526
n3:dodaniDat
n11:2015
n3:domaciTvurceVysledku
n12:2967677 Dallaeva, Dinara n12:6493645
n3:druhVysledku
n18:J
n3:duvernostUdaju
n5:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
108365
n3:idVysledku
RIV/00216305:26220/13:PU101067
n3:jazykVysledku
n13:eng
n3:klicovaSlova
Wide-band-gap semiconductor, aluminum nitride, magnetron sputtering, morphology, composition, X-ray photoelectron spectrometry, atomic force microscopy
n3:klicoveSlovo
n7:Wide-band-gap%20semiconductor n7:composition n7:aluminum%20nitride n7:magnetron%20sputtering n7:X-ray%20photoelectron%20spectrometry n7:atomic%20force%20microscopy n7:morphology
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[86A2C8F63E97]
n3:nazevZdroje
Thin Solid Films
n3:obor
n9:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
8
n3:projekt
n4:ED2.1.00%2F03.0072 n4:ED1.1.00%2F02.0068 n4:GAP102%2F11%2F0995
n3:rokUplatneniVysledku
n11:2013
n3:svazekPeriodika
526
n3:tvurceVysledku
Dallaeva, Dinara Safaraliev, Gadjimet Škarvada, Pavel Kardashova, Gulnara Tománek, Pavel Bilalov, Bilal Gitikchiev, Magomed Smith, Steve J.
s:issn
0040-6090
s:numberOfPages
5
n14:organizacniJednotka
26220