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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F12%3APU99175%21RIV13-GA0-26220___
rdf:type
n12:Vysledek skos:Concept
dcterms:description
The article deals with the diagnostics application to local defects on the edge in silicon solar cells by monitoring their optical and thermal activities during electrical excitation. During the measurement is solar cell connected to a voltage source in the reverse direction. Radiation generated from reverse-biased pn junction defects is used to study local properties. It proves to be useful to measure surface radiation and to make light spots (defects) localization. By the same way is possible to measure the radiation intensity and optical spectrum. The article deals with the diagnostics application to local defects on the edge in silicon solar cells by monitoring their optical and thermal activities during electrical excitation. During the measurement is solar cell connected to a voltage source in the reverse direction. Radiation generated from reverse-biased pn junction defects is used to study local properties. It proves to be useful to measure surface radiation and to make light spots (defects) localization. By the same way is possible to measure the radiation intensity and optical spectrum.
dcterms:title
MICRO-SIZED LOCAL DEFECTS ON THE EDGES OF SILICON SOLAR CELLS MICRO-SIZED LOCAL DEFECTS ON THE EDGES OF SILICON SOLAR CELLS
skos:prefLabel
MICRO-SIZED LOCAL DEFECTS ON THE EDGES OF SILICON SOLAR CELLS MICRO-SIZED LOCAL DEFECTS ON THE EDGES OF SILICON SOLAR CELLS
skos:notation
RIV/00216305:26220/12:PU99175!RIV13-GA0-26220___
n12:predkladatel
n16:orjk%3A26220
n3:aktivita
n18:P
n3:aktivity
P(GAP102/10/2013), P(GD102/09/H074)
n3:dodaniDat
n17:2013
n3:domaciTvurceVysledku
n13:4931637
n3:druhVysledku
n11:D
n3:duvernostUdaju
n21:S
n3:entitaPredkladatele
n6:predkladatel
n3:idSjednocenehoVysledku
150398
n3:idVysledku
RIV/00216305:26220/12:PU99175
n3:jazykVysledku
n15:eng
n3:klicovaSlova
Solar cell, local defect, nondestructive testing.
n3:klicoveSlovo
n5:local%20defect n5:Solar%20cell n5:nondestructive%20testing.
n3:kontrolniKodProRIV
[830EC97BC6DC]
n3:mistoKonaniAkce
Brno
n3:mistoVydani
Brno
n3:nazevZdroje
Electronic Devices and Systems IMAPS CS International Conference 2012
n3:obor
n7:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
3
n3:projekt
n4:GAP102%2F10%2F2013 n4:GD102%2F09%2FH074
n3:rokUplatneniVysledku
n17:2012
n3:tvurceVysledku
Macků, Robert Koktavý, Pavel Šicner, Jiří
n3:typAkce
n14:WRD
n3:zahajeniAkce
2012-06-28+02:00
s:numberOfPages
6
n22:hasPublisher
LITERA
n20:isbn
978-80-214-4539-0
n8:organizacniJednotka
26220