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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F12%3APU99139%21RIV13-GA0-26220___
rdf:type
n13:Vysledek skos:Concept
dcterms:description
This paper describes formation process and study of silicon carbide and aluminum nitride thin layers which are the advanced materials for high temperatures electronics. Sublimation epitaxy and ion-plasma method were used. Monocrystalline SiC plates of 6H polytypic were used for formation of SiC epilayers. Formation of AlN epilayers is labored because of absence of its own substrates and epitaxial deposition is made by heteroepitaxy on foreign substrates of other materials. Films of AlN were obtained by ion-plasma method on the sapphire substrates. Obtained layers are investigated by X-ray diffractometry, electron diffraction and atomic force microscopy. This paper describes formation process and study of silicon carbide and aluminum nitride thin layers which are the advanced materials for high temperatures electronics. Sublimation epitaxy and ion-plasma method were used. Monocrystalline SiC plates of 6H polytypic were used for formation of SiC epilayers. Formation of AlN epilayers is labored because of absence of its own substrates and epitaxial deposition is made by heteroepitaxy on foreign substrates of other materials. Films of AlN were obtained by ion-plasma method on the sapphire substrates. Obtained layers are investigated by X-ray diffractometry, electron diffraction and atomic force microscopy.
dcterms:title
Formation and study of SiC and AlN epilayers Formation and study of SiC and AlN epilayers
skos:prefLabel
Formation and study of SiC and AlN epilayers Formation and study of SiC and AlN epilayers
skos:notation
RIV/00216305:26220/12:PU99139!RIV13-GA0-26220___
n13:predkladatel
n14:orjk%3A26220
n4:aktivita
n18:P
n4:aktivity
P(ED2.1.00/03.0072), P(GAP102/11/0995)
n4:dodaniDat
n11:2013
n4:domaciTvurceVysledku
Dallaeva, Dinara
n4:druhVysledku
n20:D
n4:duvernostUdaju
n12:S
n4:entitaPredkladatele
n10:predkladatel
n4:idSjednocenehoVysledku
136991
n4:idVysledku
RIV/00216305:26220/12:PU99139
n4:jazykVysledku
n19:eng
n4:klicovaSlova
sublimation epitaxy, ion-plasma sputtering, structural perfection, morphology
n4:klicoveSlovo
n6:ion-plasma%20sputtering n6:structural%20perfection n6:morphology n6:sublimation%20epitaxy
n4:kontrolniKodProRIV
[131887862F97]
n4:mistoKonaniAkce
Brno
n4:mistoVydani
LITERA, Tabor 43a, 61200 Brno
n4:nazevZdroje
IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.
n4:obor
n7:JA
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
5
n4:projekt
n15:ED2.1.00%2F03.0072 n15:GAP102%2F11%2F0995
n4:rokUplatneniVysledku
n11:2012
n4:tvurceVysledku
Dallaeva, Dinara Bilalov, Bilal Kardashova, Gulnara Tománek, Pavel Safaraliev, Gadjimet
n4:typAkce
n17:WRD
n4:zahajeniAkce
2012-06-28+02:00
s:numberOfPages
5
n8:hasPublisher
Vysoke uceni technicke v Brne
n5:isbn
978-80-214-4539-0
n21:organizacniJednotka
26220