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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F12%3APU99134%21RIV13-GA0-26220___
rdf:type
skos:Concept n8:Vysledek
dcterms:description
This paper describes the theoretical analysis of ion sputtering of multicomponent targets on the basis of (SiC)1-x(AlN)x. The features of ion sputtering are studied.They are connected with consideration necessity of sputtering ratio of multicomponent materials and it changes with the increasing of ion influence dose. Moreover, the effect of low metal concentrations in silicon carbide on th sputtering velocity and layer formation is also taken into account. This paper describes the theoretical analysis of ion sputtering of multicomponent targets on the basis of (SiC)1-x(AlN)x. The features of ion sputtering are studied.They are connected with consideration necessity of sputtering ratio of multicomponent materials and it changes with the increasing of ion influence dose. Moreover, the effect of low metal concentrations in silicon carbide on th sputtering velocity and layer formation is also taken into account.
dcterms:title
Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target
skos:prefLabel
Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target
skos:notation
RIV/00216305:26220/12:PU99134!RIV13-GA0-26220___
n8:predkladatel
n9:orjk%3A26220
n3:aktivita
n15:P
n3:aktivity
P(ED2.1.00/03.0072), P(GAP102/11/0995)
n3:dodaniDat
n16:2013
n3:domaciTvurceVysledku
Dallaeva, Dinara
n3:druhVysledku
n5:D
n3:duvernostUdaju
n18:S
n3:entitaPredkladatele
n20:predkladatel
n3:idSjednocenehoVysledku
142938
n3:idVysledku
RIV/00216305:26220/12:PU99134
n3:jazykVysledku
n4:eng
n3:klicovaSlova
ion-plasma sputtering, sputtering velocity, growth rate, ion energy
n3:klicoveSlovo
n17:growth%20rate n17:sputtering%20velocity n17:ion%20energy n17:ion-plasma%20sputtering
n3:kontrolniKodProRIV
[36DD2FA4AC8B]
n3:mistoKonaniAkce
Brno
n3:mistoVydani
LITERA, Tabor 43a, 61200 Brno
n3:nazevZdroje
IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.
n3:obor
n12:JA
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
7
n3:projekt
n7:GAP102%2F11%2F0995 n7:ED2.1.00%2F03.0072
n3:rokUplatneniVysledku
n16:2012
n3:tvurceVysledku
Dallaeva, Dinara Kardashova, Gulnara Bilalov, Bilal Arkhipov, Alexandr Tománek, Pavel Safaraliev, Gadjimet
n3:typAkce
n19:WRD
n3:zahajeniAkce
2012-06-28+02:00
s:numberOfPages
5
n13:hasPublisher
Vysoke uceni technicke v Brne
n21:isbn
978-80-214-4539-0
n6:organizacniJednotka
26220