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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F12%3APU98332%21RIV13-GA0-26220___
rdf:type
skos:Concept n6:Vysledek
dcterms:description
Thin films of silicon carbide (SiC) were grown by sublimation epitaxy in vacuum on the 6H-SiC substrates. Structural properties of the initial substrates and the epilayers were studied by both electron-diffraction and X-ray diffraction methods. Electron-diffraction measurement gives the confirmation of the crystallinity of obtained layers. Experimental results show that a lattice per-fection of epilayer is equal to that of monocrystalline substrate. These results are also validated by scanning probe microscopy. So, this technology of fabrication of SiC thin films allows carry out a treatment of initial substrate defects in dependence of the process conditions. Thin films of silicon carbide (SiC) were grown by sublimation epitaxy in vacuum on the 6H-SiC substrates. Structural properties of the initial substrates and the epilayers were studied by both electron-diffraction and X-ray diffraction methods. Electron-diffraction measurement gives the confirmation of the crystallinity of obtained layers. Experimental results show that a lattice per-fection of epilayer is equal to that of monocrystalline substrate. These results are also validated by scanning probe microscopy. So, this technology of fabrication of SiC thin films allows carry out a treatment of initial substrate defects in dependence of the process conditions.
dcterms:title
Morphology and structural investigation of silicon carbide layers formated by sublimation Morphology and structural investigation of silicon carbide layers formated by sublimation
skos:prefLabel
Morphology and structural investigation of silicon carbide layers formated by sublimation Morphology and structural investigation of silicon carbide layers formated by sublimation
skos:notation
RIV/00216305:26220/12:PU98332!RIV13-GA0-26220___
n6:predkladatel
n7:orjk%3A26220
n4:aktivita
n15:P
n4:aktivity
P(ED2.1.00/03.0072), P(GAP102/11/0995), P(LH11060)
n4:dodaniDat
n19:2013
n4:domaciTvurceVysledku
Dallaeva, Dinara
n4:druhVysledku
n10:D
n4:duvernostUdaju
n17:S
n4:entitaPredkladatele
n16:predkladatel
n4:idSjednocenehoVysledku
151848
n4:idVysledku
RIV/00216305:26220/12:PU98332
n4:jazykVysledku
n13:eng
n4:klicovaSlova
structural properties, lattice perfection, epilayer, substrate, epitaxy
n4:klicoveSlovo
n9:substrate n9:structural%20properties n9:epilayer n9:lattice%20perfection n9:epitaxy
n4:kontrolniKodProRIV
[A4D58A9DE74B]
n4:mistoKonaniAkce
Brno
n4:mistoVydani
Brno
n4:nazevZdroje
Proceedings of the 18th Conference STUDENT EEICT, vol. 3
n4:obor
n18:JA
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
1
n4:projekt
n8:GAP102%2F11%2F0995 n8:ED2.1.00%2F03.0072 n8:LH11060
n4:rokUplatneniVysledku
n19:2012
n4:tvurceVysledku
Dallaeva, Dinara
n4:typAkce
n11:CST
n4:zahajeniAkce
2012-04-26+02:00
s:numberOfPages
5
n5:hasPublisher
LITERA Brno, Tabor 43a, 612 00 Brno
n21:isbn
978-80-214-4462-1
n20:organizacniJednotka
26220