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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F12%3APU104338%21RIV14-MSM-26220___
rdf:type
n8:Vysledek skos:Concept
dcterms:description
Complex permittivity of the niobium oxide capacitor 4.7 micro-F/ 10 Vdc and tantalum oxide 1 micro-F/ 25 Vdc was measured at room temperature at frequencies from 20 Hz to 2 MHz using the HP (Agilent) E4980A impedance analyzer, with Agilent 16034E 2-terminal test fixture for surface mounted devices (SMD). The real part of the complex permittivity for the niobium oxide capacitor at room temperature is 50 at 20Hz with one dielectric relaxation peak, which was observed at about 10 kHz. Whereas the real part of the complex permittivity for tantalum oxide capacitor at room temperature is 27 at 20Hz with one dielectric relaxation peak, which was observed at about 100 kHz. It has been shown that to be useful to use niobium and tantalum oxide capacitor below 100 kHz for measuring the dielectric properties of niobium and tantalum oxide film. Complex permittivity of the niobium oxide capacitor 4.7 micro-F/ 10 Vdc and tantalum oxide 1 micro-F/ 25 Vdc was measured at room temperature at frequencies from 20 Hz to 2 MHz using the HP (Agilent) E4980A impedance analyzer, with Agilent 16034E 2-terminal test fixture for surface mounted devices (SMD). The real part of the complex permittivity for the niobium oxide capacitor at room temperature is 50 at 20Hz with one dielectric relaxation peak, which was observed at about 10 kHz. Whereas the real part of the complex permittivity for tantalum oxide capacitor at room temperature is 27 at 20Hz with one dielectric relaxation peak, which was observed at about 100 kHz. It has been shown that to be useful to use niobium and tantalum oxide capacitor below 100 kHz for measuring the dielectric properties of niobium and tantalum oxide film.
dcterms:title
Dielectric Properties of Niobium Oxide Film and Tantalum Oxide Film at Electrolytic Niobium And Tantalum Capacitors Dielectric Properties of Niobium Oxide Film and Tantalum Oxide Film at Electrolytic Niobium And Tantalum Capacitors
skos:prefLabel
Dielectric Properties of Niobium Oxide Film and Tantalum Oxide Film at Electrolytic Niobium And Tantalum Capacitors Dielectric Properties of Niobium Oxide Film and Tantalum Oxide Film at Electrolytic Niobium And Tantalum Capacitors
skos:notation
RIV/00216305:26220/12:PU104338!RIV14-MSM-26220___
n8:predkladatel
n9:orjk%3A26220
n3:aktivita
n20:S
n3:aktivity
S
n3:dodaniDat
n11:2014
n3:domaciTvurceVysledku
Abuetwirat, Inas Faisel
n3:druhVysledku
n17:D
n3:duvernostUdaju
n10:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
131172
n3:idVysledku
RIV/00216305:26220/12:PU104338
n3:jazykVysledku
n15:eng
n3:klicovaSlova
Real part of complex permittivity, imaginary part of complex permittivity, loss factor, conductivity.
n3:klicoveSlovo
n12:conductivity. n12:Real%20part%20of%20complex%20permittivity n12:imaginary%20part%20of%20complex%20permittivity n12:loss%20factor
n3:kontrolniKodProRIV
[D80E6B629D89]
n3:mistoKonaniAkce
Rajecké Teplice
n3:mistoVydani
Žilina, Slovak Republic
n3:nazevZdroje
9th ELEKTRO 2012 international conference
n3:obor
n13:JA
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
2
n3:rokUplatneniVysledku
n11:2012
n3:tvurceVysledku
Palai-Dany, Tomáš Abuetwirat, Inas Faisel
n3:typAkce
n7:EUR
n3:zahajeniAkce
2012-05-21+02:00
s:numberOfPages
5
n16:hasPublisher
Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií
n6:isbn
978-1-4673-1178-6
n14:organizacniJednotka
26220