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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F12%3APU101133%21RIV14-MSM-26220___
rdf:type
skos:Concept n13:Vysledek
dcterms:description
This paper provides testing and evaluation methods for the capacitors. In many portable electronic devices (mobile phones, notebooks, automotive industry e.g.), passive components, such as capacitors, usually outnumber active components. The electrical properties have significant role for using. The new measurement setup was constructed for measuring of tantalum capacitors with different properties for better characterization of tested samples. There are several methods of measuring for capacitors as volt-amps I-V in normal (with the Ta electrode positive) or reverse mode, constant voltage vs. time I – t and capacity vs. voltage C- V. The capacity measuring was expanded by measuring capacity vs. time as C-t and capacity vs. frequency C-f in that temperature range. The analysis of charge carrier transport in Ta capacitors with MnO2 cathode in the temperature range from 80K to 300 K was performed. The MIS structure is considered for Tantalum capacitor, where insulating Ta2O5 layer is formed on metall This paper provides testing and evaluation methods for the capacitors. In many portable electronic devices (mobile phones, notebooks, automotive industry e.g.), passive components, such as capacitors, usually outnumber active components. The electrical properties have significant role for using. The new measurement setup was constructed for measuring of tantalum capacitors with different properties for better characterization of tested samples. There are several methods of measuring for capacitors as volt-amps I-V in normal (with the Ta electrode positive) or reverse mode, constant voltage vs. time I – t and capacity vs. voltage C- V. The capacity measuring was expanded by measuring capacity vs. time as C-t and capacity vs. frequency C-f in that temperature range. The analysis of charge carrier transport in Ta capacitors with MnO2 cathode in the temperature range from 80K to 300 K was performed. The MIS structure is considered for Tantalum capacitor, where insulating Ta2O5 layer is formed on metall
dcterms:title
Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K
skos:prefLabel
Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K
skos:notation
RIV/00216305:26220/12:PU101133!RIV14-MSM-26220___
n13:predkladatel
n14:orjk%3A26220
n4:aktivita
n15:P
n4:aktivity
P(MEB091129)
n4:dodaniDat
n19:2014
n4:domaciTvurceVysledku
n8:6541763 n8:6039618 n8:7899696
n4:druhVysledku
n18:D
n4:duvernostUdaju
n5:S
n4:entitaPredkladatele
n10:predkladatel
n4:idSjednocenehoVysledku
122304
n4:idVysledku
RIV/00216305:26220/12:PU101133
n4:jazykVysledku
n17:eng
n4:klicovaSlova
Charge carrier transport, tantalum pentoxide, thin film, tunneling, Poole-Frenkel current
n4:klicoveSlovo
n7:Charge%20carrier%20transport n7:tunneling n7:thin%20film n7:Poole-Frenkel%20current n7:tantalum%20pentoxide
n4:kontrolniKodProRIV
[CCAABBCDA7E1]
n4:mistoKonaniAkce
Otočec Slovenia
n4:mistoVydani
Slovinsko
n4:nazevZdroje
MIDEM Society for Microelectronic, Electronic Components and Materials - Conference 2012 Proceedings
n4:obor
n16:JA
n4:pocetDomacichTvurcuVysledku
3
n4:pocetTvurcuVysledku
4
n4:projekt
n21:MEB091129
n4:rokUplatneniVysledku
n19:2012
n4:tvurceVysledku
Holcman, Vladimír Pettersson, Hakan Sedláková, Vlasta Kopecký, Martin
n4:typAkce
n20:WRD
n4:zahajeniAkce
2012-09-19+02:00
s:numberOfPages
6
n12:hasPublisher
MIDEM
n9:isbn
978-961-92933-2-4
n22:organizacniJednotka
26220