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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F12%3APU100610%21RIV13-GA0-26220___
rdf:type
skos:Concept n12:Vysledek
dcterms:description
This study describes morphology and structure of SiC thin films which are grown up by sublimation epitaxy in vacuum on the 6H-SiC substrates with thickness from tens of nanometers up to units of micrometers. Fashioned films are quite uniform in surface and volume. The crystal properties of the wafers and epitaxial layers are studied by electron diffraction investigation, X-ray techniques, and scanning probe microscopy. X-ray rocking curves show that structural perfection of SiC films is comparable with the structural perfection of monocrystalline 6H-SiC substrates. Calculated lattice parameters of epilayer by X-ray diffractometry also match with known values for 6H-SiC. Electron-diffraction measurement gives the confirmation of the crystallinity of the obtained layers and it is also proved by scanning probe microscopy. This technology allows making of defect treatment of the wafer in dependence on epitaxial conditions. Fundamental analysis in this field allows optimize conditions of thin films formati This study describes morphology and structure of SiC thin films which are grown up by sublimation epitaxy in vacuum on the 6H-SiC substrates with thickness from tens of nanometers up to units of micrometers. Fashioned films are quite uniform in surface and volume. The crystal properties of the wafers and epitaxial layers are studied by electron diffraction investigation, X-ray techniques, and scanning probe microscopy. X-ray rocking curves show that structural perfection of SiC films is comparable with the structural perfection of monocrystalline 6H-SiC substrates. Calculated lattice parameters of epilayer by X-ray diffractometry also match with known values for 6H-SiC. Electron-diffraction measurement gives the confirmation of the crystallinity of the obtained layers and it is also proved by scanning probe microscopy. This technology allows making of defect treatment of the wafer in dependence on epitaxial conditions. Fundamental analysis in this field allows optimize conditions of thin films formati
dcterms:title
Theoretical and Experimental Investigation of SiC Thin Films Surface Theoretical and Experimental Investigation of SiC Thin Films Surface
skos:prefLabel
Theoretical and Experimental Investigation of SiC Thin Films Surface Theoretical and Experimental Investigation of SiC Thin Films Surface
skos:notation
RIV/00216305:26220/12:PU100610!RIV13-GA0-26220___
n12:predkladatel
n17:orjk%3A26220
n4:aktivita
n14:P
n4:aktivity
P(ED2.1.00/03.0072), P(GAP102/10/2013), P(LH11060)
n4:cisloPeriodika
5
n4:dodaniDat
n15:2013
n4:domaciTvurceVysledku
Dallaeva, Dinara
n4:druhVysledku
n9:J
n4:duvernostUdaju
n16:S
n4:entitaPredkladatele
n18:predkladatel
n4:idSjednocenehoVysledku
174185
n4:idVysledku
RIV/00216305:26220/12:PU100610
n4:jazykVysledku
n11:eng
n4:klicovaSlova
silicon carbide, sublimation, atomic force microscopy
n4:klicoveSlovo
n7:atomic%20force%20microscopy n7:sublimation n7:silicon%20carbide
n4:kodStatuVydavatele
CZ - Česká republika
n4:kontrolniKodProRIV
[929B86B55CB1]
n4:nazevZdroje
ElectroScope - http://www.electroscope.zcu.cz
n4:obor
n13:JA
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
3
n4:projekt
n8:ED2.1.00%2F03.0072 n8:LH11060 n8:GAP102%2F10%2F2013
n4:rokUplatneniVysledku
n15:2012
n4:svazekPeriodika
2012
n4:tvurceVysledku
Dallaeva, Dinara Bilalov, Bilal Tománek, Pavel
s:issn
1802-4564
s:numberOfPages
5
n10:organizacniJednotka
26220