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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F12%3APU100264%21RIV14-MSM-26220___
rdf:type
skos:Concept n13:Vysledek
dcterms:description
The purpose of the study is formation and investigation of SiC/(SiC)1-x(AlN)x structure by scanning electron microscopy and atomic force microscopy. Sublimation epitaxy of the policrystalline sourse of (SiC)1-x(AlN)x was used. The optimal conditions of sublimation process are defined. These structures could be used as substrate for desing of semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, it also can be uses for production of transistors with high mobility of electrons and also for creation of blue and ultraviolet lith emmiters, in light-emmited diodes and laser diodes. The purpose of the study is formation and investigation of SiC/(SiC)1-x(AlN)x structure by scanning electron microscopy and atomic force microscopy. Sublimation epitaxy of the policrystalline sourse of (SiC)1-x(AlN)x was used. The optimal conditions of sublimation process are defined. These structures could be used as substrate for desing of semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, it also can be uses for production of transistors with high mobility of electrons and also for creation of blue and ultraviolet lith emmiters, in light-emmited diodes and laser diodes.
dcterms:title
Scanning electron microscopy of the thin layers of silicon carbide-aluminum nitride solid solution formatted by sublimation epitaxy Scanning electron microscopy of the thin layers of silicon carbide-aluminum nitride solid solution formatted by sublimation epitaxy
skos:prefLabel
Scanning electron microscopy of the thin layers of silicon carbide-aluminum nitride solid solution formatted by sublimation epitaxy Scanning electron microscopy of the thin layers of silicon carbide-aluminum nitride solid solution formatted by sublimation epitaxy
skos:notation
RIV/00216305:26220/12:PU100264!RIV14-MSM-26220___
n13:predkladatel
n14:orjk%3A26220
n3:aktivita
n4:P n4:S
n3:aktivity
P(ED2.1.00/03.0072), P(GAP102/11/0995), P(LH11060), S
n3:dodaniDat
n15:2014
n3:domaciTvurceVysledku
Dallaeva, Dinara n18:6493645
n3:druhVysledku
n21:D
n3:duvernostUdaju
n10:S
n3:entitaPredkladatele
n19:predkladatel
n3:idSjednocenehoVysledku
166798
n3:idVysledku
RIV/00216305:26220/12:PU100264
n3:jazykVysledku
n20:eng
n3:klicovaSlova
compostion, morphology, temperature, sublimation
n3:klicoveSlovo
n6:sublimation n6:temperature n6:morphology n6:compostion
n3:kontrolniKodProRIV
[0CCA700C5B9E]
n3:mistoKonaniAkce
Liberec
n3:mistoVydani
Prague 8
n3:nazevZdroje
Optics and Measurement 2012
n3:obor
n17:JA
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
3
n3:projekt
n11:ED2.1.00%2F03.0072 n11:LH11060 n11:GAP102%2F11%2F0995
n3:rokUplatneniVysledku
n15:2012
n3:tvurceVysledku
Dallaeva, Dinara Tománek, Pavel Bilalov, Bilal
n3:typAkce
n5:EUR
n3:zahajeniAkce
2012-10-16+02:00
s:numberOfPages
4
n8:hasPublisher
Institute of Plasma Physics AS CR, v.v.i. - TOPTEC
n16:isbn
978-80-87026-02-1
n7:organizacniJednotka
26220