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Namespace Prefixes

PrefixIRI
n9http://linked.opendata.cz/ontology/domain/vavai/riv/typAkce/
dctermshttp://purl.org/dc/terms/
n16http://localhost/temp/predkladatel/
n11http://purl.org/net/nknouf/ns/bibtex#
n10http://linked.opendata.cz/resource/domain/vavai/projekt/
n5http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n14http://linked.opendata.cz/resource/domain/vavai/subjekt/
n13http://linked.opendata.cz/ontology/domain/vavai/
n21http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216305%3A26220%2F11%3APU96227%21RIV12-MSM-26220___/
n23https://schema.org/
n18http://linked.opendata.cz/resource/domain/vavai/zamer/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n4http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n8http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n20http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n12http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n22http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n17http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n19http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F11%3APU96227%21RIV12-MSM-26220___
rdf:type
skos:Concept n13:Vysledek
dcterms:description
We have performed investigation of noise and transport mechanisms in insulating films of Ta2O5 and Nb2O5 from the point of view of their application as dielectric layers in capacitors, MOS devices, etc. These dielectric films show high relative permittivity, low leakage current density of the order of nA/cm2 in the electric field 1MV/cm, and high breakdown field of the order of 3-4 MV/cm. Analysis of I-V characteristics performed as a function of temperature allows the identification of dominant conduction mechanisms and corresponding noise sources. Ta2O5 films of the thickness about 28 nm and Nb2O5 thin films of the thickness about 150 nm were investigated. Tunneling current mechanism is dominant for the temperatures below 200 K. In this temperature range current noise spectral density is 1/f type. Poole-Frenkel and Schottky current transport mechanism is dominant for temperatures higher than 350 K. 1/f noise is pronounced in the frequency range bellow 20 Hz, while in the range 20 to 100 Hz GR noise We have performed investigation of noise and transport mechanisms in insulating films of Ta2O5 and Nb2O5 from the point of view of their application as dielectric layers in capacitors, MOS devices, etc. These dielectric films show high relative permittivity, low leakage current density of the order of nA/cm2 in the electric field 1MV/cm, and high breakdown field of the order of 3-4 MV/cm. Analysis of I-V characteristics performed as a function of temperature allows the identification of dominant conduction mechanisms and corresponding noise sources. Ta2O5 films of the thickness about 28 nm and Nb2O5 thin films of the thickness about 150 nm were investigated. Tunneling current mechanism is dominant for the temperatures below 200 K. In this temperature range current noise spectral density is 1/f type. Poole-Frenkel and Schottky current transport mechanism is dominant for temperatures higher than 350 K. 1/f noise is pronounced in the frequency range bellow 20 Hz, while in the range 20 to 100 Hz GR noise
dcterms:title
Noise of Ta2O5 and Nb2O5 thin insulating films in the temperature range 10 K to 400 K Noise of Ta2O5 and Nb2O5 thin insulating films in the temperature range 10 K to 400 K
skos:prefLabel
Noise of Ta2O5 and Nb2O5 thin insulating films in the temperature range 10 K to 400 K Noise of Ta2O5 and Nb2O5 thin insulating films in the temperature range 10 K to 400 K
skos:notation
RIV/00216305:26220/11:PU96227!RIV12-MSM-26220___
n13:predkladatel
n14:orjk%3A26220
n3:aktivita
n12:Z n12:P
n3:aktivity
P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)
n3:dodaniDat
n19:2012
n3:domaciTvurceVysledku
n5:6209947 n5:7899696 n5:6541763
n3:druhVysledku
n22:D
n3:duvernostUdaju
n8:S
n3:entitaPredkladatele
n21:predkladatel
n3:idSjednocenehoVysledku
216148
n3:idVysledku
RIV/00216305:26220/11:PU96227
n3:jazykVysledku
n20:eng
n3:klicovaSlova
1/f noise, G-R noise, Tunnelling, Poole-Frenkel current, Thin oxide films
n3:klicoveSlovo
n4:G-R%20noise n4:Poole-Frenkel%20current n4:Tunnelling n4:Thin%20oxide%20films n4:1%2Ff%20noise
n3:kontrolniKodProRIV
[0B7F5F85B6BD]
n3:mistoKonaniAkce
Toronto, Kanada
n3:mistoVydani
Kanada
n3:nazevZdroje
Proceedings of ICNF 2011
n3:obor
n17:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
4
n3:projekt
n10:GD102%2F09%2FH074 n10:GA102%2F09%2F1920
n3:rokUplatneniVysledku
n19:2011
n3:tvurceVysledku
Kopecký, Martin Chvátal, Miloš Sedláková, Vlasta Šikula, Josef
n3:typAkce
n9:WRD
n3:zahajeniAkce
2011-06-12+02:00
n3:zamer
n18:MSM0021630503
s:numberOfPages
4
n11:hasPublisher
IEEE
n23:isbn
978-1-4577-0191-7
n16:organizacniJednotka
26220